CVDSim Chemical Module

For those cases when modeling of epitaxy or chemical vapor deposition requires advanced essentially three-dimensional computations, STR offers chemical models that can be used as add-ons with such multi-physics software as CFD-ACE or FLUENT.

The capabilities of chemical models will be very similar to the respective features of Virtual Reactor. Though, below we provide general scope of models, we recommend that you contact one of our offices directly to inquire about the availability of CVDSim edition for the specific materials system of your interest. 


  • Nitride Edition: GaN, AlN, AlGaN, AlInN, and InGaN  MOVPE
  • III-V Edition: GaAs, AlAs, AlGaAs, InP, InGaAs, InGaP, InGaAlAs, and InGaAlP MOVPE
  • SiC Edition: SiC CVD, Si nanoparticle formation, N and Al doping
  • HVPE Edition: GaN, AlN, and AlGaN HVPE


“Process Condition Optimization for High Throughput and High Efficiency Growth of the AlGaN/GaN HEMT Structure in a Single Wafer Rotating Disc MOCVD Reactor” by B. Mitrovic*, R Bubber, J. Su, E. Marcelo, M. Deshpande, and A. Paranjpe, CS Mantech 2017

“Convection-assisted chemical vapor deposition (CoCVD) of silicon on large-area substrates” by Kunz T, Burkert I, Auer R, Lovtsus A, Talalaev R, Makarov Y, Journal of Crystal Growth (2008) 310(6) 1112-1117, DOI: 10.1016/j.jcrysgro.2007.12.027