Software for Modeling of Crystal Growth, Epitaxy and Devices
Epitaxy and Deposition
Thin film epitaxy: Virtual Reactor (VR)
- III-Nitrides
- III-Vs
- CVD SiC, HTCVD of SiC
- CVD Si and SiGe
- HVPE of III-Vs and Oxides, MOCVD of Oxydes
Strain/relaxation during the epitaxy of nitride heterostructures: STREEM InGaN, STREEM AlGaN
Poly-silicon deposition by the Siemens Process: PolySim
Chemical vapor infiltration of SiC: VR-CVI SiC
Devices
Bandgap engineering in LED & LD heterostructures: SiLENSe,
Bandgap engineering in superlattices: BESST
Current spreading and heating in LED chip: SpeCLED
Light extraction in LED chip: RATRO
Umbrella term for SiLENSe, SpeCLED and RATRO used together: SimuLED
Field effect transistor: FETIS
Photovoltaic cell heterostructure: PVcell
Bulk Crystal Growth
Including modeling of crystal shape evolution, thermal stress and dislocations dynamics
For growth from melt and solution – CGSim
For growth from vapor – Virtual Reactor (VR)
Collection of illustrated application examples for the modeling of bulk crystal growth can be found in Crystal Growth