STR provides software and consulting services for modeling of bulk crystal growth, epitaxy and semiconductor devices
Surface Recombination in Micro-LEDs
Coupled simulation of current spreading/crowding, LED self-heating, and carrier losses due to surface recombination in SimuLED software
Growth from Melt and Solution
CGSim software for analysis and optimization of Cz, LEC, VGF, Bridgman and other techniques for the growth of semiconductor and semitransparent crystals
Epitaxial stress in AlGaN
Analysis of of bow, stress, and dislocation density evolution during the epitaxy of AlGaN-based structures with STREEM-AlGaN software
SiC growth by PVT
Computation and analysis of thermal fields, mass transfer during the whole growth cycle, crystal shape evolution, powder charge degradation, stress and dislocation dynamics during both the growth and cooling
Modeling of SiC Crystal Growth, Epitaxy, and MOCVD of III-Nitrides
Video of presentation on modeling of SiC crystal growth and epitaxy and MOCVD of III-nitrides made by Andrey Smirnov during 16th China International Forum on Solid State Lighting and International Forum on Wide Bandgap Semiconductors can be viewed online
CGSim 20.1 Has Been Released.
A new version of crystal growth simulation software CGSim has been released. New options available in CGSim 20.1 are as follows: Basic CGSim: Settings of chemical model of GaN growth from solution are extended. New standard example of Ga2O3 growth is added....
Modeling of CVI Process
On September 22-26, 2019, STR will participate in 10th International Conference on High Temperature Ceramic Matrix Composites (HT-CMC10) with invited talk on modeling of CVI of SiC.
CGSim 20.0 Has Been Released
New version of CGSim has advanced chemical model of SiC and GaN growth from solution, chemical model of Ky sapphire, model of oxygen precipitate formation
On September 29 – October 4 STR will participate in (ICSCRM) 2019 that will take place in Kyoto, Japan. We will have a booth (look for STR Japan). Come see us at the exhibition!
Virtual Reactor 8.0 Released
Have a look at the list of updates
STR will participate in The 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) in Keystone, Colorado, on July 28–August 2, 2019. Open full text for a list of 8 presentations
On July 7-12, 2019, we will participate in The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) in Bellevue, Washington
On November 11-16, 2018 STR will be participating in The International Workshop on Nitride Semiconductors 2018 (IWN 2018) in Kanazawa, Japan
On October 21-24, 2018 STR will be participating in International Workshop on Modeling in Crystal Growth (IWMCG-9) at Big Island, HI
On 2nd – 6th September 2018 STR will participate in The European Conference on Silicon Carbide and Related Materials (ECSCRM) in Birmingham, UK.
CGSim 18.2 Has Been Released
STR Group has released a new version of crystal growth simulation software CGSim. New version has extended CGSim capabilities for modeling and optimization of rapidly developing technologies of SiC and GaN crystal growth from solution.
June 4 to 14, 2018, STR will participate in CIMTEC 2018 – 14th International Conference on Modern Materials and Technologies – in Perugia, Italy
CS MANTECH 2018
STR will participate in exhibition at CS MANTECH conference that will be held in Austin, Texas on May 7th – 10th, 2018. See www.csmantech.org for details.
SiC Growth by TSSG
Recently STR has addressed modeling of SiC growth from solution by top seeded solution growth technique (TSSG) and co-authored a publication in JCG.
Efficiency of True-Green LEDs
Full text of a new publication “Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects” by Ilya E. Titkov, Sergey Yu. Karpov (STR Group), Amit Yadav, Denis Mamedov, Vera L. Zerova and Edik Rafailov*, Materials 2017, 10(11), 1323; doi: 10.3390/ma10111323 is now available online.
STR will attend ICSCRM 2017 in Washington, D.C. on September 17-22, 2017. We will be attending as exhibitors and present two posters: “Transport Phenomena in PVT Growth of SiC Bulk Crystals” and “Model of Growth of N- and Al-Doped SiC Structures in the SiH4 + C3H8 + HCl System”
ACCGE-21 and OMVPE-18
At ACCGE-21 and OMVPE-18 in Santa Fe, New Mexico, on July 30 – August 4, 2017 STR will have an oral presentation on Zinc Distribution and Dislocation Density Evolution in CZT Bridgeman Crystal Growth and another one on MOCVD of GA2O3
STR will participate in ICNS12 on 24-28 July 2017. In Strasbourg, France, we will make an oral presentation “Effect of carrier localization on recombination processes and efficiency of polar LEDs operating in the “green gap””