Latest Software Updates

CGSim Update

1. CGSim 23.1 has been released. Model of GaN growth from solution now supports solution of Ga-Na-Li.  The chemical model of Ga2O3 growth has been made applicable to arbitrary compositions of the Ar-O2-CO2 gas mixture.
2. “Application of computer modeling to pulling rate and productivity of Czochralski pullers in PV Si crystal growth”  (Li, Smirnov, JCG, Volume 611, 2023, 127178) is temporarily available for free download. 

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Tunnel Junctions in SiLENSe 6.5

SiLENSe version 6.5 has been released. New version supports simulation of heterostructures including tunnel junctions. Tunnel junctions can be used to connect different cascades of LED/LD structures or enable replacing p-contact by combination of TJ and n-contact.

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New option for PVT SiC

VR software for simulation of PVT SiC can now be used to estimate the expected wafer warpage for different positions of the slice in SiC boule. The model is based on the plastic strain inherited by the wafer from the crystal, which results in the wafer deformation after cutting.

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PolySim and PolySim 3D version 2022.10 have been released

PolySim and PolySim 3D version 2022.10 have been released. The main new features are:
– Better integration between PolySim and PolySim3D.
– Popcorn simulation is introduced in PolySim3D. The user can find and analyze the popcorn locations on the rod surfaces and make optimizations to reduce popcorn in the most problematic spots.

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IWCGT-8

STR is participating in 8th International Workshop on Crystal Growth Technology (IWCGT-8) held in Berlin, Germany  on  May 29 – June 2, 2022. Vladimir Artemyev, STR Belgrade (Serbia), presents a poster on “Advanced Modeling of Melt Turbulence, Impurities and Bubble Transport in Cz Silicon Crystal Growth”.

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CGSim 22.0 has been released

Features include added chemical model of the phosphorus evaporation from Si melt,
improved chemical model of nitrogen evaporation from Si melt, 3-D modeling of the gas bubbles formation and transport in Cz Si, new STR-k turbulence model for RANS modeling.

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PL in SiLENSe 6.4

SiLENSe version 6.4 has been released. Simulation of PL is updated in such a way that generated carriers are included into the main drift-diffusion computations. As users can specify the p-n junction bias together with PL excitation, PL simulation can predict the photocurrent and can be used for simulation of photodiodes and single-junction solar cells.

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VR 8.2 for PVT SiC

VR-PVT SiC has been updated. New features include automatic switching between phases in the powder source (pure carbon, graphitized SiC with simultaneous coexistence of SiC and carbon, or pure SiC), programmable variation of argon/nitrogen ratio in the gas, improved boundary shifting procedure in long-term growth.

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Intrinsic Carbon Doping

Unintentional carbon incorporation during MOCVD growth of GaN can now be considered in the whole family of STR software tools for modeling of epitaxy. The model can be applied to different reactor types and wide rang of process parameters, such as temperature, pressure, TMGa flow rate (growth rate), V/III ratio, and carrier gas composition. Modeling can be used both to find process parameters suitable to achieve a required doping level and to adjust the carbon concentration uniformity over large wafers.

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Faster Problem Specification in Flow Module 3D

CGSim 21.0 has been released. New tool added in Flow Module 3D makes problem setup at least 4 times faster by facilitating the transfer of the hot zone geometry along with computational mesh and material properties from Basic CGSim to Flow Module. 

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Events

Conference on Si and SiGe

Conference on Si and SiGe

STR will participate in The Joint ISTDM-ICSI conference that will cover topical issues in the area of group IV materials and technology research, and will be held in Como, Italy, on May 21-25, 2023. We will present our recent results in the report “Modeling of Silicon Epitaxy on 300 mm Wafers and Analysis of Thickness Uniformity at Different Scales”

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CS International

CS International

STR will have a booth at CS International Conference on April 18-19. The conference will be held in Brussels, Belgium, in The Sheraton Brussels Airport Hotel, conveniently located just 39 steps away from the arrivals and departures hall. Do not miss the opportunity to meet in person, stop by at the booth or schedule a meeting.  

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IWCGT-8

IWCGT-8

STR is participating in 8th International Workshop on Crystal Growth Technology (IWCGT-8) held in Berlin, Germany  on  May 29 – June 2, 2022. Vladimir Artemyev, STR Belgrade (Serbia), presents a poster on “Advanced Modeling of Melt Turbulence, Impurities and Bubble Transport in Cz Silicon Crystal Growth”.

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SSLCHINA and IFWS

SSLCHINA and IFWS

On December 6-8, 2021, STR has participated in SSL China and IFWS forum in Shenzhen, China. STR-China presented a talk “Scaling and optimization of chip design of mini- and micro-LEDs”  

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ACCGE-22 and OMVPE-20

ACCGE-22 and OMVPE-20

STR has participated in ACCGE-22/OMVPE-20 on August 2-4, 2021. We presented works on Ga2O3 crystal growth, growth of CZ Silicon, PVT growth of SiC.

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