Latest Software Updates
IWCGT-8
STR is participating in 8th International Workshop on Crystal Growth Technology (IWCGT-8) held in Berlin, Germany on May 29 – June 2, 2022. Vladimir Artemyev, STR Belgrade (Serbia), presents a poster on “Advanced Modeling of Melt Turbulence, Impurities and Bubble Transport in Cz Silicon Crystal Growth”.
CGSim 22.0 has been released
Features include added chemical model of the phosphorus evaporation from Si melt,
improved chemical model of nitrogen evaporation from Si melt, 3-D modeling of the gas bubbles formation and transport in Cz Si, new STR-k turbulence model for RANS modeling.
PL in SiLENSe 6.4
SiLENSe version 6.4 has been released. Simulation of PL is updated in such a way that generated carriers are included into the main drift-diffusion computations. As users can specify the p-n junction bias together with PL excitation, PL simulation can predict the photocurrent and can be used for simulation of photodiodes and single-junction solar cells.
VR 8.2 for PVT SiC
VR-PVT SiC has been updated. New features include automatic switching between phases in the powder source (pure carbon, graphitized SiC with simultaneous coexistence of SiC and carbon, or pure SiC), programmable variation of argon/nitrogen ratio in the gas, improved boundary shifting procedure in long-term growth.
Intrinsic Carbon Doping
Unintentional carbon incorporation during MOCVD growth of GaN can now be considered in the whole family of STR software tools for modeling of epitaxy. The model can be applied to different reactor types and wide rang of process parameters, such as temperature, pressure, TMGa flow rate (growth rate), V/III ratio, and carrier gas composition. Modeling can be used both to find process parameters suitable to achieve a required doping level and to adjust the carbon concentration uniformity over large wafers.
Faster Problem Specification in Flow Module 3D
CGSim 21.0 has been released. New tool added in Flow Module 3D makes problem setup at least 4 times faster by facilitating the transfer of the hot zone geometry along with computational mesh and material properties from Basic CGSim to Flow Module.
New Version of SiLENSe
SiLENSe Version 6.3 has been released. It is a major update of the software including advanced models for material properties and a new solver with improved speed and convergence.
Tri-Halide VPE of GaN
Chemical model for simulation of THVPE has been added in HEpiGaNs software. Simulation of two-chamber source of GaCl3 is supported.
SpeCLED & RATRO Update for Micro-LEDs
SimuLED software had a major update, namely, new SpeCLED & RATRO modules with capabilities enabling simulation of micro-LEDs were released. Improvements include new solver in RATRO.
Virtual Reactor 8.1 Released
A new version includes new features for modeling of both epitaxy and bulk crystal growth.
Events
IWCGT-8
STR is participating in 8th International Workshop on Crystal Growth Technology (IWCGT-8) held in Berlin, Germany on May 29 – June 2, 2022. Vladimir Artemyev, STR Belgrade (Serbia), presents a poster on “Advanced Modeling of Melt Turbulence, Impurities and Bubble Transport in Cz Silicon Crystal Growth”.
SSLCHINA and IFWS
On December 6-8, 2021, STR has participated in SSL China and IFWS forum in Shenzhen, China. STR-China presented a talk “Scaling and optimization of chip design of mini- and micro-LEDs”
ACCGE-22 and OMVPE-20
STR has participated in ACCGE-22/OMVPE-20 on August 2-4, 2021. We presented works on Ga2O3 crystal growth, growth of CZ Silicon, PVT growth of SiC.
Conference SMTBEA-2021
On May 19-21, 2021, STR is participating in International Conference on “Sustainable Materials and Technologies for Bio and Energy Applications (SMTBEA-2021)”. Join the conference online and attend Andrey Smirnov’s talk “Numerical modeling in growth of oxide crystals from the melt” on Friday, May 21st at 3:30 p.m. Indian Standard Time.
Semicon China 2021
After a long period of COVID-19 quarantines and lockdowns, STR was thrilled to participate in Power and Compound Semiconductor International Forum organized with SEMICON China 2021 on March 18-19. Hope to see more friends and customers at the conferences to come!