Modeling of the Epitaxy of III-Nitrides

VR™ Nitride Edition is suitable for the modeling of the following reactor types:

  • Planetary reactors
  • High-speed rotation Turbodisc reactors
  • Horizontal reactors
  • Close-coupled showerhead reactors
  • Home-made reactors that can be simulated within a 2D plane or axisymmetric model

For reactors with essentially 3D configurations, chemical model can be used as an add on for some multiphysics software packages.

Software includes the following readily available chemical models:

  • GaN growth from TMGa and NH3
    • Unintentional GaN doping by Carbon
    • GaN doping by Carbon using CH4
    • GaN doping by Si using SiH4
    • GaN doping by Mg using MgCp2
  • AlN growth from TMAl and NH3
  • AlGaN growth from TMAl, TMGa, and NH3
    • Unintentional AlGaN doping by Carbon
  • InGaN growth
    • from TMGa, TMIn, and NH3
    • from TEGa, TMIn, and NH3
  • AlInN growth from TMAl, TMIn, and NH3

For different precursors, please ask us directly. The software is constantly developing and some models can already be available or might be added.

Example of the use of chemical model: Effect of process conditions on AlN growth rate and source efficiency in Veeco PropelTM MOCVD single wafer reactor … ,  based on advanced CFD and chemistry modeling. B. Mitrovic et al., CS Mantech 2017


“Mechanisms of intrinsic carbon doping during MOVPE of AlN- and GaN-based materials” by Roman Talalaev and Anna Lobanova, The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), was hosted in Bellevue, Washington, Seattle’s Eastside

“Indium incorporation in quaternary InxAlyGa1−x−yN for UVB-LEDs” by Johannes Enslin, Tim Wernicke, Anna Lobanova, Gunnar Kusch, Lucia Spasevski, Tolga Teke, Bettina Belde, Robert W. Martin, Roman Talalaev and Michael Kneissl, June 2019 Japanese Journal of Applied Physics 58(SC):SC1004

“Modeling analysis of carbon incorporation in AlxGa1−xN (x>0.9) grown by MOVPE” by Anna Lobanova, Frank Mehnke, Roman Talalaev, Tim Wernicke, Michael Kneissl, poster at EWMOVPE18th, 2019, Vilnus, Lithuania

“Process Condition Optimization for High Throughput and High Efficiency Growth of the AlGaN/GaN HEMT Structure in a Single Wafer Rotating Disc MOCVD Reactor” by B. Mitrovic*, R Bubber, J. Su, E. Marcelo, M. Deshpande, and A. Paranjpe, CS Mantech 2017

“Modeling and process design of III-Nitride MOVPE at near-atmospheric pressure in Close Coupled Showerhead and Planetary Reactors” by M. Dauelsberg, C. Martin, H. Protzmann, A. R. Boyd, E. J. Thrush, J. Kappeler, M. Heuken, R.A. Talalaev, E.V. Yakovlev, A. V. Kondratyev, Journal of Crystal Growth 298, 418 (2007)

“Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor” by E.V. Yakovlev, R.A. Talalaev, R.W. Martin, C. Jeynes, N. Peng, C.J. Deatcher, and I.M. Watson, Phys. Stat. Sol. (c) 3, 1620 (2006)

“Effect of V/III ratio in AlN and AlGaN MOVPE” by A.Lobanova, K.Mazaev, R.A.Talalaev, M.Leys, S.Boeykens, K.Cheng, S.Degroote, Journal of Crystal Growth 287, 601 (2006)

“In-situ investigations of GaN chemical instability during MOCVD” by Zavarin E.E., Sizov D.S., Lundin W.V., Tsatsulnikov A.F., Talalaev R.A., Kondratyev A.V., Bord O.V., Electrochemical Society Proceedings 2005-09, 299 (2005)