VR™ is suitable for the modeling of the following reactor types:

• Planetary reactors
• High-speed rotation Turbodisc reactors
• Horizontal reactors
• Close-coupled showerhead reactors
• Home-made reactors that can be simulated within a 2D plane or axisymmetric model

Software includes the following readily available chemical models:

• Arsenides
  • InAs epitaxy from TMIn and AsH₃ or TBAs
  • GaAs epitaxy from TMGa and AsH₃ or TBAs
  • AlAs epitaxy from TMAl and AsH₃
  • In_xGa_1-xAs epitaxy from TMIn, TMGa, and AsH₃ or TBAs
  • In_xAl_1-xAs epitaxy from TMIn, TMAl, and AsH₃
  • Al_xGa_1-xAs epitaxy from TMAl, TMGa, and AsH₃
  • In_xGa_yAl_1-x-yAs epitaxy from TMIn, TMGa, TMAl, and AsH₃
• Phosphides
  • InP epitaxy from TMIn and PH₃ or TBP
  • GaP epitaxy from TMGa and PH₃ or TBP
  • AlP epitaxy from TMAl and PH₃
  • In_xGa_1-xP epitaxy from TMIn, TMGa, and PH₃ or TBP
  • In_xAl_1-xP epitaxy from TMIn, TMAl, and PH₃
  • Al_xGa_1-xP epitaxy from TMAl, TMGa, and PH
  • In_xGa_yAl_1-x-yP epitaxy from TMIn, TMGa, TMAl, and PH₃
• Mixed Group-V Compounds
  • InAsP epitaxy from TMIn, AsH₃, and PH₃
  • GaAsP epitaxy from TMGa, AsH₃, and PH₃
  • AlAsP epitaxy from TMAl, AsH₃, and PH₃
  • InGaAsP epitaxy from TMIn, TMGa, AsH₃, and PH₃
  • InAlAsP epitaxy from TMIn, TMAl, AsH₃, and PH₃
  • AlGaAsP epitaxy from TMAl, TMGa, AsH₃, and PH₃
• Doping
  • Al_xGa_1-xAs, GaAs, and AlAs doping by Si from SiH₄
  • In_xGa_1-xP, In_xAl_1-xP, InP, GaP, and AlP doping by Mg from MgCp₂

For different precursors, please, ask us directly. The software is constantly developing and some models can already be available or might be added.