Modeling for HVPE (Nitrides, III/Vs, Oxides) and MOCVD of Oxides

Modeling of HVPE can be carried out using HEpiGaNs edition of the Virtual Reactor software. Capabilities of  HEpiGaNs also include growth of gallium oxide by MOCVD. The following materials and growth techniques are readily available:

  • Growth of group-III Nitrides:
    • GaN bulk and epitaxial growth by
      • HVPE from NH3 and GaCl or GaCl3
      • OVPE from NH3 and Ga2O
      • HF-VPE from NH3 and gaseous Ga and GaHx
    • AlN bulk and epitaxial growth by HVPE
    • AlxGa1-xN and InxGa1-xN epitaxial growth by HVPE
  • Oxides:
    • β-Ga2O3 growth by HVPE and MOCVD
  • Growth of group-III Arsenides by HVPE using group-III chlorides and AsH3
  • Growth of group-III Phosphides by HVPE using group-III chlorides and PH3


“High-Quality Epitaxial β-Ga2OGrowth by Close Coupled Showerhead MOCVD” by F. Alema, B. Hertog, A. Osinsky, E. Ahmadi, F. Wu, J. Speck, M. Bogdanov, A. Lobanova, R. Talalaev, A. Galyukov, MRS Fall 2017, Boston, MA

“Experimental Study and Modeling of Ga2O3Epitaxial Growth by MOCVD in a CIS Reactor”, M. Bogdanov, A. Lobanova, R. Talalaev, A. Galyukov, F. Alema, B. Hertog, and A. Osinsky, IWGO 2017, Parma, Italy

“Simulation of β-Ga2O3 growth by HVPE” by M.V. Bogdanov, A.V. Kulik, M.S. Ramm, ECSCRM 2016

“Epitaxial Growth of Ga2O3 by MOCVD Using Oxygen: Experimental Study and Model Verification” by M. Bogdanov, A. Lobanova, R. Talalaev, A. Galyukov, F. Alema, B.Hertog, A. Osinsky, ACCGE-21, 2016. Santa Fe, NM

“Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN” by E. Gridneva, E. Richter, M. Feneberg, M. Weyers, R. Goldhahn, and G. Trankle, Phys. Status Solidi B, 1–9 (2015) / DOI 10.1002/pssb.201451609

“Modeling analysis of AlN and AlGaN HVPE” by A. S. Segal, D. S. Bazarevskiy, M. V. Bogdanov, and E. V. Yakovlev, Physica Status Solidi (c) 6(S2):S329 – S332 (2009)

“Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE” by E. Richter, Ch. Hennig, M. Weyers, F. Habel, J.-D. Tsay, W.-Y. Liu, P. Bruåckner, F. Scholz, Yu. Makarov, A. Segal, J. Kaeppeler, Journal of Crystal Growth 277 (2005) 6–12 (01)

“Surface chemistry and transport effects in GaN hydride vapor phase epitaxy” by A.S. Segal, A.V. Kondratyev, S.Yu. Karpov, D. Martin, V. Wagner, M. Ilegems, Journal of Crystal Growth 270 (2004) 384–395 (01)


Schematic view of HVPE reactor, computed flow and ammonia partial pressure

Flow Pattern and Species Distributions in HVPE growth of Ga2O3. Published at ECSCRM 2016