Modeling of Chemical Vapor Deposition of SiC 

VR™ CVD SiC can be used for modeling of temperature distribution, flow, gas phase reactions including secondary phase formation, parasitic deposition and epitaxy. It is designed to aid in optimization of the the growth rate and uniformity, growth efficiency in terms of precursor utilization, uniformity of doping, mitigation of parasitic deposition. The software has been successfully applied for planetary reactors, vertical high-speed rotating disc reactors, horizontal reactors.

Software includes the following readily available chemical models:

  • Epitaxial and bulk growth of SiC by CVD
    • From C3H8 and SiH4 with account of generation of Si particles
      • in Cl-free atmosphere
      • with addition of HCl
    • From C3H8 and SiCl4
    • From C3H8 and TCS
    • From C3H8 and DCS
    • From MTS (CH3SiCl3) or MS (H3SiCH3)
  • Doping:
    • Aluminum doping using TMAl
    • Nitrogen doping using N2 or NH3
    • Aluminum and nitrogen co-doping
  • Bulk growth by HTCVD (High-Temperature CVD)
    • Growth of SiC from C3H8 and SiH4 with account for generation and re-evaporation of SiC particles.

For different precursors, please ask us directly. The software is constantly developing and some models can already be available or might be added.

Irradiating layer observed over the substrate in experiment and predicted density of Si clusters WHICH PUBLICATION?

Different ways to visualize temperature distribution during CVD SiC


“Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC” by A.S. Segal, S.Yu. Karpov, A.V. Lobanova, E.V. Yakovlev, K. Hara, Masami Naitog, Materials Science Forum 821-823:145-148 (2015), DOI: 10.4028/

“Analysis of SiC CVD growth in a horizontal hot-wall reactor by experiment and 3D modelling” by Shishkin, Y.Myers-Ward, R.L.Saddow, S.E., …Talalaev, R.Makarov, Yu., Materials Science Forum2007556-557, pp. 61-64, Conference Paper

“Numerical study of SiC CVD in a vertical cold-wall reactor” by Vorob’ev, A.N.Karpov, S.Yu.Bogdanov, M.V., Zhmakin, A.I.Makarov, Yu.N., Computational Materials Science200224(4), pp. 520-534

“Modeling analysis of gas-phase nucleation during SiC CVD in the Planetary Reactor” by A.N. Vorob’ev, A.K. Semennikov, A.I. Zhmakin, Yu.N. Makarov, M. Dauelsberg, F. Wischmeyer, M. Heuken, H. Jurgensen, Mat. Sci. Forum, 353-356 (2001) 103

“Influence of silicon gas-to-particle conversion on SiC CVD in a cold-wall rotating-disc reactor”, Vorob’ev A, Bogdanov M, Komissarov A, Karpov S, Bord O, Lovtsus A, Makarov Y, Materials Science Forum (2001) 353-356 107-110, DOI: 10.4028/

“Computational experiment on CVD of SiC: Growth rate, C/Si ratio, parasitic phase formation”, Vorob’ev A, Komissarov A, Bogdanov M, Karpov S, Bord O, Zhmakin A, Lovtsus A, Makarov Y, Materials Research Society Symposium – Proceedings (2000)

“Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide”, by A.N Vorob’ev, S.Yu Karpov, A.I Zhmakin, A.A Lovtsus, Yu.N Makarov, A Krishnan, Journal of Crystal Growth Vol. 211, Issues 1–4 (2000) 343-346

“Modeling of gas phase nucleation during silicon carbide chemical vapor deposition” by Vorob’ev A, Karpov S, Bord O, Diamond and Related Materials (2000)