Modeling of CVD of SiC

For modeling of CVD of SiC, STR offers VR™ CVD SiC software that is recommended for quick generation and analysis of trends in 2D approximation and CVDSim3D for detailed 3D modeling of reactors and recipe tuning. Both software tools can be used to for modeling of temperature distribution, flow, gas phase reactions including secondary phase formation, parasitic deposition, epitaxy and doping. The applications include optimization of the the growth rate and uniformity, growth efficiency in terms of precursor utilization, uniformity of doping, mitigation of parasitic deposition. Software can also be used for process scale up and transfer.

VR CVD SiC includes the following readily available chemical models:

  • Epitaxial and bulk growth of SiC by CVD
    • From C3H8 and SiH4 with account of generation of Si particles
      • in Cl-free atmosphere
      • with addition of HCl
    • From C3H8 and SiCl4
    • From C3H8 and TCS
    • From C3H8 and DCS
    • From MTS (CH3SiCl3) or MS (H3SiCH3)
  • Doping:
    • Aluminum doping using TMAl
    • Nitrogen doping using N2 or NH3
    • Aluminum and nitrogen co-doping
  • Deposits analysis (SiC,  SiC-C, SiC-Si, C and Si)
  • Bulk growth by HTCVD (High-Temperature CVD)
    • Growth of SiC from C3H8 and SiH4 with account for generation and re-evaporation of SiC particles.

For different precursors, please ask us directly. The software is constantly developing and some models can already be available or might be added.

The Model of NuFlareReactor in CVDSim3D. Geometry: Jpn. J. Appl. Phys. 58, SBBK06 (2019)

Different ways to visualize temperature distribution calculated in VR CVD SiC

Irradiating layer observed over the substrate in experiment and predicted density of Si clusters 

Publications:

“Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC” by A.S. Segal, S.Yu. Karpov, A.V. Lobanova, E.V. Yakovlev, K. Hara, Masami Naitog, Materials Science Forum 821-823:145-148 (2015), DOI: 10.4028/www.scientific.net/MSF.821-823.145

“Analysis of SiC CVD growth in a horizontal hot-wall reactor by experiment and 3D modelling” by Shishkin, Y., Myers-Ward, R.L., Saddow, S.E., …Talalaev, R., Makarov, Yu., Materials Science Forum, 2007, 556-557, pp. 61-64, Conference Paper

“Numerical study of SiC CVD in a vertical cold-wall reactor” by Vorob’ev, A.N., Karpov, S.Yu., Bogdanov, M.V., Zhmakin, A.I., Makarov, Yu.N., Computational Materials Science, 2002, 24(4), pp. 520-534

“Modeling analysis of gas-phase nucleation during SiC CVD in the Planetary Reactor” by A.N. Vorob’ev, A.K. Semennikov, A.I. Zhmakin, Yu.N. Makarov, M. Dauelsberg, F. Wischmeyer, M. Heuken, H. Jurgensen, Mat. Sci. Forum, 353-356 (2001) 103

“Influence of silicon gas-to-particle conversion on SiC CVD in a cold-wall rotating-disc reactor”, Vorob’ev A, Bogdanov M, Komissarov A, Karpov S, Bord O, Lovtsus A, Makarov Y, Materials Science Forum (2001) 353-356 107-110, DOI: 10.4028/www.scientific.net/msf.353-356.107

“Computational experiment on CVD of SiC: Growth rate, C/Si ratio, parasitic phase formation”, Vorob’ev A, Komissarov A, Bogdanov M, Karpov S, Bord O, Zhmakin A, Lovtsus A, Makarov Y, Materials Research Society Symposium – Proceedings (2000)

“Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide”, by A.N Vorob’ev, S.Yu Karpov, A.I Zhmakin, A.A Lovtsus, Yu.N Makarov, A Krishnan, Journal of Crystal Growth Vol. 211, Issues 1–4 (2000) 343-346

“Modeling of gas phase nucleation during silicon carbide chemical vapor deposition” by Vorob’ev A, Karpov S, Bord O, Diamond and Related Materials (2000)