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STR Software for Modeling of Crystal Growth, Epitaxy, and Semiconductor Devices
  • Home
  • Crystal Growth
    • Semiconductor Materials
    • Solar Silicon
    • Optical Crystals
    • Laser Materials
  • Epitaxy and Deposition
    • Nitrides
    • III-Vs
    • Si and SiGe
    • CVD SiC
    • HTCVD of SiC
    • HVPE
    • Strain Engineering
      • Strain in AlGaN
      • Strain in InGaN
    • Siemens Process
    • CVI of SiC
  • Devices
    • LED chip
    • Micro-LEDs
    • Heterostructure
      • Blue MQW LED
      • ZnO-based LED
      • Polar/Semi/Non
    • Current Spreading
    • Light Extraction
    • Superlattices
    • HEMTs and FETs
    • Photovoltaic Cell
  • All Software
    • CGSim
      • Flow Module
    • Virtual Reactor
      • VR Disclocations
      • VR Unsteady Module
    • CVDSim
    • STREEM AlGaN
    • STREEM InGaN
    • PolySim
    • SimuLED
    • SiLENSe
    • SpeCLED
    • RATRO
    • FETIS
    • BESST
    • PVcell
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Modeling of Epitaxy and Deposition

Thin film epitaxy: Virtual Reactor (VR)

  • III-Nitrides
  • III-Vs
  • CVD SiC,  HTCVD of SiC
  • CVD Si and SiGe
  • HVPE of III-Vs and Oxides, MOCVD of Oxydes

Strain/relaxation during the epitaxy of nitride heterostructures: STREEM InGaN, STREEM AlGaN

Poly-silicon deposition by the Siemens Process: PolySim

Chemical vapor infiltration of SiC: VR-CVI SiC

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