Modeling of SiC Crystal Growth by PVT with Virtual Reactor Software
VR PVT SiC (Virtual Reactor) is a software tool for the simulation of long-term growth of SiC bulk crystals from the vapor phase such as PVT and HTCVD. VR capabilities include analysis of thermal effects, chemical models, mass transfer, evolution of the crystal shape, powder charge degradation. Stress and dislocation dynamics can be simulated for both the growth itself and the cooling phase. Thus, results could include the density of threading and basal plane dislocations as well as residual stress.
Software can be particularly useful for the following practical tasks:
- Re-design of the furnace to achieve more favorable thermal profiles or mass transport patterns. Namely, software gives an opportunity to try multiple ideas for hardware changes quickly and inexpensively. It also provides immediate access to all the “monitoring” data. The models implemented in VR would reflect the effects of the modifications on the crystal shape, powder charge, possible parasitic deposition etc.
- Development of the recipe. Because for bulk crystal growth one needs to optimize a set of time-dependent parameters such as variation of temperature, running long and expensive process over and over might be costly. Also, the interpretation of the results can be complicated by the lack of monitoring data. Software, on the other hand, allows to get closer to the optimal recipe quickly and without wasting resources. It narrows the experimental optimization to fine tuning phase only. Note that modeling approach is applicable for the heating stage, crystal growth recipe, and the cooling phase.
SiC crystal shape evolution and powder charge degradation as reported at IWMCG-9 (2018) by Galyukov et. al.
Shape Evolution
Modeling of the crystal shape evolution
Threading Dislocations
Tracking and mapping of threading dislocations
Cool Down Recipe
Effect of cooling recipe on residual stress and BPD density
Graphite Particles
Analysis of forces acting on a graphite particle in the gas phase
Powder Charge
Material evaporation and transport, granule size evolution, etc.
Poly-SiC Deposits
Identification of areas where where polycrystalline SiC is expected and prediction of deposition rate
HTCVD of SiC
With particle formation and transport
Publications by (or in collaboration with) VR Users
“Effect of Material Loss through the Porous Crucible on SiC Bulk Crystal Growth” by Mark Ramm, M. Arzig, M. Bogdanov, A. Denisov, A. Kulik, B. Mamin, V. Neverov, R. Sidorov, D. Skvortsov, B. Spill, J. Steiner, P. Wellmann
“Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction” by R.Hock, K.Konias, L. Perdicaro, A.Magerl, P.Hens, P.J.Wellmann, Materials Science Forum Vols. 645-648 (2010) pp 29-32
“Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace” by Eugene Tupitsyn, Alexander Galyukov, Maxim Bogdanov, Alexey Kulik, Mark Ramm, Yuri Makarov, Tangali Sudarshan, Materials Science Forum Vols. 600-603 (2009) pp 27-30
“In situ visualization of SiC physical vapor transport crystal growth” by PeterWellmann, ZiadHerro, AlbrechtWinnacker, RolandPüsche, MartinHundhausen, PierreMasri, AlexeyKulik, MaximBogdanov, SergeyKarpov, MarkRamm, YuriMakarov, Journal of Crystal Growth 275, p.1-2, (2005)
“Modeling analysis of free-spreading sublimation growth of SiC crystals” by Bogdanov M.V., Demina S.E., Karpov S.Yu., Kulik A.V., Ofengeim D.Kh., Ramm M.S., Mokhov E.N., Roenkov A.D., Vodakov Yu.A., Makarov Yu.N., Helava H., Materials Research Society Symposium Proceedings, Vol.742, p.K1.3, (2003)
“Inverse-computation design of a SiC bulk crystal growth system”, Kulik A.V., Demina S.E., Kochuguev S.K., Ofengeim D.Kh., Karpov S.Yu., Vorob’ev A.N., M.V. Bogdanov, Ramm M.S., Zhmakin A.I., Alonso A.A., Gurevich S.G., Makarov Yu.N., Materials Research Society Symposium Proceedings, Vol.640, p.H1.6.1-H1.6.6, (2001)
“Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT” by Selder M., Kadinski L., Makarov Yu., Durst F., Wellmann P., Straubinger T., Hofmann D., Karpov S., Ramm M., Journal of Crystal Growth, Vol.211, p.333-338, (2000)
Publications
“SiC Sublimation Growth at Small Spacing between Source and Seed” by E.N. Mokhov, A.D. Roenkov, A.S. Segal Materials Science Forum 740-742:69-72 (2013), DOI: 10.4028/www.scientific.net/MSF.740-742.69
“Modeling of Vapor-Phase Growth of SiC and AlN Bulk Crystals” by Talalaev, R.A., Segal, A.S., Yakovlev, E.V., Vorob’ev, A.N., book chapter in “Crystal Growth Technology: Semiconductors and Dielectrics” (2010)
“Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth” by Bogdanov M.V., Galyukov A.O., Karpov S.Yu., Kulik A.V., Kochuguev S.K., Ofengeim D.Kh., Tsirulnikov A.V., Ramm M.S., Zhmakin A.I., Makarov Yu.N., Journal of Crystal Growth, Vol.225, p.307-311, (2001)
“Mass transport and powder source evolution in sublimation growth of SiC bulk crystals” by Karpov D.S., Bord O.V., Ramm M.S., Karpov S.Yu., Zhmakin A.I., Makarov Yu.N., Materials Science Forum, Vol.353-356, p.37-40, (2001)
“Virtual reactor: a new tool for SiC bulk crystal growth study and optimization” by Bogdanov M.V., Galyukov A.O., Karpov S.Yu., Kulik A.V., Kochuguev S.K., Ofengeim D.Kh., Tsirulnikov A.V., Zhmakin I.A., Komissarov A.E., Bord O.V., Ramm M.S., Zhmakin A.I., Makarov Yu.N., Materials Science Forum, Vol.353-356, p.57-60, (2001)
“Modeling of PVT Growth of Bulk SiC Crystals: General Trends and 2” to 4” Reactor Scaling” by M.S. RAMM, A.V. KULIK, I.A. ZHMAKIN, S.Yu. KARPOV, O.V. BORD, S.E. DEMINA, Yu.N. MAKAROV, MRS symposia proceedings, Materials Research Society, Vol. 616, p 227-233, (2000)
“Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas” by Segal A.S., Vorob’ev A.N., Karpov S.Yu., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., Vodakov Yu.A., Makarov Yu.N., Journal of Crystal Growth, Vol.208, p.431-441, (2000)
“Analysis of sublimation growth of bulk SiC crystals in tantalum container” by Karpov S.Yu., Kulik A.V., Zhmakin I.A., Makarov Yu.N., E.N. Mokhov, Ramm M.G., Ramm M.S., Roenkov A.D., Vodakov Yu.A., Journal of Crystal Growth, Vol.211, p.347-351, (2000)
Publications 1996-1999
“Specific features of sublimation growth of bulk SiC crystals in tantalum container” by Makarov Yu.N., Demina S.E., Karpov S.Yu., Kulik A.V., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., Vodakov Yu.A., Zhmakin A.I., International Conference on Silicon Carbide and Related Materials, Abstract N 247., (1999)
“Transport phenomena in sublimation growth of SiC bulk crystals” by Segal A.S., Vorob’ev A.N., Karpov S.Yu., Makarov Yu.N., Mokhov E.N., Ramm M.G. , Ramm M.S., Roenkov A.D., Vodakov Yu.A. , Zhmakin A.I., Materials Science and Engineering, Vol.B61-62, p.40-43, (1999)
“Optimization of sublimation growth of SiC bulk crystals using modeling” by Ramm M.S., Mokhov E.N., Demina S.E., Ramm M.G., Karpov S.Yu., Roenkov A.D , Vodakov Yu.A., Segal A.S., Vorob’ev A.N., Kulik A.V., Makarov Yu.N., Materials Science and Engineering, Vol.B61-62, p.107-112, (1999)
“Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth” by Egorov Yu.E., Galyukov A.O., Gurevich S.G., Makarov Yu.N., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., Segal A.S., Vodakov Yu.A., Vorob’ev A.N., Zhmakin A.I., Materials Science Forum, Vol.264-268, p.61-64, (1998)
“Simulation of Sublimation Growth of SiC Single Crystal” by S.Yu. Karpov, Yu.N. Makarov, M.S. Ramm, Physica Status Solidi (b), Vol.202, p.201-220, (1997)
“Modelling of species transport and excess phases formation during sublimation growth of SiC in sandwich system” by Karpov S.Yu., Makarov Yu.N., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., Talalaev R.A., Vodakov Yu.A., Institute of Physics Conference Series, N 155, Chapt.9, p.655-658, (1997)
“Analysis of silicon carbide growth by sublimation sandwich method” by Karpov S.Yu., Makarov Yu.N., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., Talalaev R.A., Vodakov Yu.A.,
Journal of Crystal Growth, Vol. 173, p.408-416, (1997)
“Control of SiC growth and graphitization in sublimation sandwich system” by Karpov S.Yu., Makarov Yu.N., Ramm M.S., Talalaev R.A. , Materials Science and Engineering, Vol.B46, p.340-344, (1997)
“Analytical model of silicon carbide growth under free-molecular transport conditions” by Karpov S.Yu., Makarov Yu.N., Ramm M.S., Journal of Crystal Growth, Vol.169, p.491-495, (1996)
“Theoretical consideration of Si-droplets and graphite inclusions formation during chemical vapor deposition of SiC epitaxial layers” by Karpov S.Yu., Makarov Yu.N., Ramm M.S., Institute of Physics Conference Series, N.142, Chapt.1, p.177-180, (1996)