Intrinsic Carbon Doping

Intrinsic Carbon Doping

Unintentional carbon incorporation during MOCVD growth of GaN can now be considered in the whole family of STR software tools for modeling of epitaxy, including VR-NE, CVDSim add-on to ESI CFD-ACE, and CVDSim add-on to ANSYS Fluent. The model can be applied to...
Tri-Halide VPE of GaN

Tri-Halide VPE of GaN

New chemical model has been added in HEpiGaNs – simulation of tri-halide vapor phase epitaxy of GaN. Unlike HVPE, production of GaCl3 used as a source in THVPE requires two-step and, respectively, two-chamber process. Simulation of both stages, including exposure of...
Virtual Reactor 8.1 Released

Virtual Reactor 8.1 Released

A new version of Virtual Reactor is released. The key updates in VR 8.1 are as follows:  For the epitaxial editions: A model of SiC doping by N2 has been implemented. The model assumes the dissociative Langmuir mechanism of the Nitrogen adsorption, accounting for the...
Virtual Reactor 8.1 Released

Virtual Reactor 8.0 Released

All editions of Virtual Reactor are now built as 64bit Windows applications. Model of unsteady epitaxial growth of Si on patterned wafers has been implemented in VR-CVD Si. Models of unintentional carbon doping in GaN growth by MOCVD have been implemented in VR...