PL in SiLENSe 6.4

PL in SiLENSe 6.4

SiLENSe version 6.4 has been released. Simulation of photoluminescence (PL) is updated in such a way that carriers generated by PL excitation are included into the main drift-diffusion computations. As userscan specify the p-n junction bias together with PL...
SSLCHINA and IFWS

SSLCHINA and IFWS

STR-China (Suzhou STR Software Technology Co., Ltd.) has participated in The 7th International Forum on Wide Bandgap Semiconductors & The 18th China International Forum on Solid State Lighting held jointly on December 6-8, 2021, in Shenzhen, China. As one of the...
Electrical-thermal-optical simulations of AlGaInP-based LEDs

Electrical-thermal-optical simulations of AlGaInP-based LEDs

STR has published a new paper: “Critical aspects of AlGaInP-based LED design and operation revealed by full electrical-thermal-optical simulations” by Olga Fedorova, Kirill Bulashevich, and Segrey Karpov. It is available as an open access publication. All...
ACCGE-22 and OMVPE-20

ACCGE-22 and OMVPE-20

STR has participated in 22nd American Conference on Crystal Growth and Epitaxy (ACCGE-22) and 20th US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-20) virtual conference on August 2-4, 2021. Five works were presented:   MODELING OF GA2O3 CRYSTAL GROWTH...
VR 8.2 for PVT SiC

VR 8.2 for PVT SiC

VR-PVT SiC 8.2 has been released. The main updates are as follows: A new model of SiC powder source has been developed. Namely, the old model has been extended to better accommodate the effects related to the powder recrystallization. The new model provides switching...
Intrinsic Carbon Doping

Intrinsic Carbon Doping

Unintentional carbon incorporation during MOCVD growth of GaN can now be considered in the whole family of STR software tools for modeling of epitaxy, including VR-NE, CVDSim add-on to ESI CFD-ACE, and CVDSim add-on to ANSYS Fluent. The model can be applied to...