VR 8.2 for PVT SiC

VR 8.2 for PVT SiC

VR-PVT SiC 8.2 has been released. The main updates are as follows: A new model of SiC powder source has been developed. Namely, the old model has been extended to better accommodate the effects related to the powder recrystallization. The new model provides switching...
Modeling of SiC Crystal Growth, Epitaxy, and MOCVD of III-Nitrides

Modeling of SiC Crystal Growth, Epitaxy, and MOCVD of III-Nitrides

Video of presentation on modeling of SiC crystal growth and epitaxy and MOCVD of III-nitrides made by Andrey Smirnov during 16th China International Forum on Solid State Lighting and 2019 International Forum on Wide Bandgap Semiconductors can be viewed online:...