Semicon China 2021

Semicon China 2021

After a long period of COVID-19 quarantines and lockdowns, STR was thrilled to participate in Power and Compound Semiconductor International Forum 2021 organized in conjunction with SEMICON China 2021 on March 18-19, 2021 in Kerry Hotel, Shanghai. Hope to see more...
Modeling of SiC Crystal Growth, Epitaxy, and MOCVD of III-Nitrides

Modeling of SiC Crystal Growth, Epitaxy, and MOCVD of III-Nitrides

Video of presentation on modeling of SiC crystal growth and epitaxy and MOCVD of III-nitrides made by Andrey Smirnov during 16th China International Forum on Solid State Lighting and 2019 International Forum on Wide Bandgap Semiconductors can be viewed online:...
Modeling of CVI Process

Modeling of CVI Process

On September 22-26, 2019, STR will participate in 10th International Conference on High Temperature Ceramic Matrix Composites (HT-CMC10) that will be held in Bordeaux, France, http://ht-cmc10.event-vert.org/. We will present invited talk “Macroscopic Numerical...
ICSCRM 2019

ICSCRM 2019

On September 29 – October 4 STR will participate in International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 that will take place in Kyoto, Japan. We will have a booth (look for STR Japan). Come see us at the exhibition!  Research work...
ICCGE-19

ICCGE-19

STR will participate in The 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) that will take place in Keystone, Colorado, July 28–August 2, 2019. The list of presentations (co-)authored by STR: “Modeling Solutions for Silicon Carbide Crystal...
ICNS-13

ICNS-13

On July 7-12, 2019, STR will participate in The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) in Bellevue, Washington, Seattle’s Eastside. Visit us at our Booth during the Exhibition. Oral presentation:  A2.9.06 “Control of Stress, Bow,...