Tri-Halide VPE of GaN

Tri-Halide VPE of GaN

New chemical model has been added in HEpiGaNs – simulation of tri-halide vapor phase epitaxy of GaN. Unlike HVPE, production of GaCl3 used as a source in THVPE requires two-step and, respectively, two-chamber process. Simulation of both stages, including exposure of...
Modeling of SiC Crystal Growth, Epitaxy, and MOCVD of III-Nitrides

Modeling of SiC Crystal Growth, Epitaxy, and MOCVD of III-Nitrides

Video of presentation on modeling of SiC crystal growth and epitaxy and MOCVD of III-nitrides made by Andrey Smirnov during 16th China International Forum on Solid State Lighting and 2019 International Forum on Wide Bandgap Semiconductors can be viewed online:...