CGSim Update

CGSim Update

CGSim 23.1 has been released. Model of GaN growth from solution now supports solution of Ga-Na-Li.  The chemical model of Ga2O3 growth has been made applicable to arbitrary compositions of the Ar-O2-CO2 gas mixture. Recent publication illustrating the use of CGSim...
IWCGT-8

IWCGT-8

STR is participating in 8th International Workshop on Crystal Growth Technology (IWCGT-8) held in Berlin, Germany  on  May 29 – June 2, 2022. Vladimir Artemyev, STR Belgrade (Serbia), presents a poster on “Advanced Modeling of Melt Turbulence, Impurities and...
CGSim 22.0 has been released

CGSim 22.0 has been released

New features in Basic CGSim solver and solver GUI include:  Plotter of monitoring points; Chemical model of the phosphorus evaporation from Si melt; Updated and improved chemical model of nitrogen evaporation from Si melt; Improved stability of the solver and the...
CGSim 22.0 has been released

Faster Problem Specification in Flow Module 3D

CGSim 21.0 has been released. Flow Module 3D is now equipped with a powerful tool that facilitates the transfer of the hot zone geometry along with computational mesh and material properties from Basic CGSim to Flow Module. It allows the user to significantly reduce...
CGSim 20.1 Has Been Released.

CGSim 20.1 Has Been Released.

A new version of crystal growth simulation software CGSim has been released. New options available in CGSim 20.1 are as follows:   Basic CGSim: Settings of chemical model of GaN growth from solution are extended. New standard example of Ga2O3 growth is added....
CGSim Update

CGSim 20.0 Has Been Released

STR has released a new version of crystal growth simulation software CGSim 20.0.The main new features are below:  Advanced chemical model of SiC and GaN growth from solution and chemical model of Ky sapphire growth are available. STR model of oxygen precipitate...