May 29, 2022
STR is participating in 8th International Workshop on Crystal Growth Technology (IWCGT-8) held in Berlin, Germany on May 29 – June 2, 2022. Vladimir Artemyev, STR Belgrade (Serbia), presents a poster on “Advanced Modeling of Melt Turbulence, Impurities and...
Apr 22, 2022
New features in Basic CGSim solver and solver GUI include: Plotter of monitoring points; Chemical model of the phosphorus evaporation from Si melt; Updated and improved chemical model of nitrogen evaporation from Si melt; Improved stability of the solver and the...
Apr 5, 2021
CGSim 21.0 has been released. Flow Module 3D is now equipped with a powerful tool that facilitates the transfer of the hot zone geometry along with computational mesh and material properties from Basic CGSim to Flow Module. It allows the user to significantly reduce...
Jan 21, 2020
A new version of crystal growth simulation software CGSim has been released. New options available in CGSim 20.1 are as follows: Basic CGSim: Settings of chemical model of GaN growth from solution are extended. New standard example of Ga2O3 growth is added....
Jul 30, 2019
STR has released a new version of crystal growth simulation software CGSim 20.0.The main new features are below: Advanced chemical model of SiC and GaN growth from solution and chemical model of Ky sapphire growth are available. STR model of oxygen precipitate...
Jun 7, 2018
STR Group has released a new version of crystal growth simulation software CGSim. New version has extended CGSim capabilities for modeling and optimization of rapidly developing technologies of SiC and GaN crystal growth from solution. Minor improvements and bug fixes...
