About

About STR provides specialized software and consulting services for modeling of crystal growth, epitaxy/ deposition and semiconductor devices. Comprehensive research is behind every consulting activity and software product, which enables careful validation of physical...
IWCGT-8

IWCGT-8

STR is participating in 8th International Workshop on Crystal Growth Technology (IWCGT-8) held in Berlin, Germany  on  May 29 – June 2, 2022. Vladimir Artemyev, STR Belgrade (Serbia), presents a poster on “Advanced Modeling of Melt Turbulence, Impurities and...
CGSim 22.0 has been released

CGSim 22.0 has been released

New features in Basic CGSim solver and solver GUI include:  Plotter of monitoring points; Chemical model of the phosphorus evaporation from Si melt; Updated and improved chemical model of nitrogen evaporation from Si melt; Improved stability of the solver and the...
PL in SiLENSe 6.4

PL in SiLENSe 6.4

SiLENSe version 6.4 has been released. Simulation of photoluminescence (PL) is updated in such a way that carriers generated by PL excitation are included into the main drift-diffusion computations. As userscan specify the p-n junction bias together with PL...
SSLCHINA and IFWS

SSLCHINA and IFWS

STR-China (Suzhou STR Software Technology Co., Ltd.) has participated in The 7th International Forum on Wide Bandgap Semiconductors & The 18th China International Forum on Solid State Lighting held jointly on December 6-8, 2021, in Shenzhen, China. As one of the...