STR will be participating in ICSCRM 2026, the 23rd International Conference on Silicon Carbide and Related Materials, taking place September 27 – October 2, 2026, in Yokohama, Japan. This year, we are excited to contribute two research works to the technical program:
Oral Presentation: [Fr-3B-03] Quantitative Modelling of Hot-Zone Degradation and Its Impact on PVT Growth of SiC Crystal by *Andrey Smirnov1, Laura Ristić1, Aleksa Crnobrnja1, Maxim Bogdanov1, Daria Zimina2, Łukasz Kantor3 (1. STR Europe (Serbia), 2. STR US, Inc. (USA), 3. ON Semiconductor Czech Republic, s.r.o. (Czech Republic))
Poster Presentation: [We-P-40] Multi-Scale Modeling and Experimental Analysis of SiC Gate Trench Profile Control in ICP-RIE Chamber by *Yury Shustrov1, Ivan Petraš1, Andrey Smirnov1, Oleg Rusch2 (1. Semiconductor Technology Research d.o.o. Beograd (Serbia), 2. Fraunhofer IISB (Germany))
We also invite you to stop by our Booth G-8 during the exhibition. See you in Yokohama!