Join us in Brussels for the CS International Conference (April 20–22). Be sure to mark your calendars for Tuesday at 12:15 PM to attend Andrey Smirnov’s presentation.
PRESENTATION OUTLINE
Computer modeling has become a reliable workhorse in the semiconductor industry, capturing complex physical and chemical phenomena and providing valuable knowledge. As the demand for GaN-on-Si power devices increases, the industry requires solutions that can translate reactor recipes directly into material performance. In this work, we demonstrate the newest capabilities of STR’s modeling software for the analysis and optimization of GaN MOCVD processes. These capabilities establish a direct correlation between growth regimes and epilayer properties, including thickness, composition, dopant/impurity concentration, and point defects. Furthermore, a new approach enables the convenient optimization of growth recipes to achieve an optimal combination of structural and electrical characteristics. This simultaneous improvement of wafer-level uniformity and electrical performance significantly reduces R&D cycles, supporting the transition toward high-yield, large-scale GaN manufacturing.