The latest CGSim 26.1 update brings significant advancements for modeling of dopant transport in Czochralski (Cz) silicon crystal growth.
Key improvements:
- Quasi-unsteady dopant modeling – a new approach provides faster and more accurate simulation of axial dopant uniformity during Cz silicon growth supported by a dedicated, intuitive GUI.
- Enhanced unsteady chemical model now accounts for phosphorus and boron incorporation in the silicon melt from gas-phase species, enabling realistic gas-phase doping simulations.
- Continuous Czochralski (CCz) modeling capabilities enable analysis of dopant contribution from feedstock and the impact of granular silicon feeding on the melt temperature and flow.
- Twin formation criterion – a new tool for evaluating how process parameters affect the probability of twin crystal formation in GaAs and InP growth.
CGSim 26.1 continues to expand modeling capabilities for silicon and compound crystal growth, delivering higher accuracy and efficiency for both R&D and industrial applications.