STR will participate in the ISCSI-X & ICSI/ISTDM 2025 conference, which will be held in Yokohama, Japan, from November 10–13, 2025. Our team will contribute two works:
- Oral presentation: Analysis of key factors affecting selectivity and conformality of lateral Si/SiGe stack etching.
- Poster presentation: Growth kinetics and thickness uniformity during 200 mm Ge epitaxy in a horizontal flow reactor.
We will also have an exhibition booth, where you can meet our team and explore STR’s latest modeling capabilities.
If you would like to schedule a meeting, please feel free to contact us – we would be happy to reserve a time slot for you.