SiLENSe version 2024.1 has been released. The new version uses k∙p model for description of non-parabolic dependence of hole energy on the wave vector. So, the hole concentration is calculated as following. First, an exact solution of the k∙p model with account for the strain effect on the band structure is used for calculation of the hole energy. Then density of states (DOS) and hole concentration are calculated numerically.
The angular dependence of TE emission is always uniform, while angular dependence of the TM emission and degree of polarization are predicted by SiLENSe basing on the energy-dependent interband matrix element. For edge-emitting lasers, the gain spectra for for TE and TM modes are predicted separately.
The use of the k∙p model can be switched on/off.