Conference on Si and SiGe

Conference on Si and SiGe

STR will participate in The International Conference on Silicon Epitaxy and Heterostructures / International SiGe Technology and Device Meeting. The Joint ISTDM-ICSI conference that will cover topical issues in the area of group IV materials and technology research,...
CGSim Update

CGSim Update

CGSim 23.1 has been released. Model of GaN growth from solution now supports solution of Ga-Na-Li.  The chemical model of Ga2O3 growth has been made applicable to arbitrary compositions of the Ar-O2-CO2 gas mixture.  Recent publication illustrating the use of...