SiLENSe version 6.4 has been released. Simulation of photoluminescence (PL) is updated in such a way that carriers generated by PL excitation are included into the main drift-diffusion computations. As users
can specify the p-n junction bias together with PL excitation, PL simulation can predict the photocurrent and can be used for simulation of photodiodes and single-junction solar cells. The default dataset includes a simple model for the absorption coefficient for III-nitrides. Users are welcome to update these data, if necessary.