Unintentional carbon incorporation during MOCVD growth of GaN can now be considered in the whole family of STR software tools for modeling of epitaxy, including VR-NE, CVDSim add-on to ESI CFD-ACE, and CVDSim add-on to ANSYS Fluent. The model can be applied to different reactor types and wide rang of process parameters, such as temperature, pressure, TMGa flow rate (growth rate), V/III ratio, and carrier gas composition. Modeling can be used both to find process parameters suitable to achieve a required doping level and to adjust the carbon concentration uniformity over large wafers. Examples of model verification are given below: carbon concentration vs growth rate and carbon concentration vs temperature. Experimental data from: W.V. Lundin et al., ICMOVPE XIX, Nara (2018)
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