New chemical model has been added in HEpiGaNs – simulation of tri-halide vapor phase epitaxy of GaN. Unlike HVPE, production of GaCl3 used as a source in THVPE requires two-step and, respectively, two-chamber process. Simulation of both stages, including exposure of GaCl to additional Cl2 to form GaCl3, is supported. Please, do not hesitate to contact STR team for more detailed information.