Mar 19, 2020
A new version of Virtual Reactor is released. The key updates in VR 8.1 are as follows: For the epitaxial editions: A model of SiC doping by N2 has been implemented. The model assumes the dissociative Langmuir mechanism of the Nitrogen adsorption, accounting for the...
Mar 15, 2020
Video of presentation on modeling of SiC crystal growth and epitaxy and MOCVD of III-nitrides made by Andrey Smirnov during 16th China International Forum on Solid State Lighting and 2019 International Forum on Wide Bandgap Semiconductors can be viewed online:...
