Jul 30, 2019
STR has released a new version of crystal growth simulation software CGSim 20.0.The main new features are below: Advanced chemical model of SiC and GaN growth from solution and chemical model of Ky sapphire growth are available. STR model of oxygen precipitate...
Jul 16, 2019
On September 29 – October 4 STR will participate in International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 that will take place in Kyoto, Japan. We will have a booth (look for STR Japan). Come see us at the exhibition! Research work...
Jul 9, 2019
All editions of Virtual Reactor are now built as 64bit Windows applications. Model of unsteady epitaxial growth of Si on patterned wafers has been implemented in VR-CVD Si. Models of unintentional carbon doping in GaN growth by MOCVD have been implemented in VR...
