STR will participate in The 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) that will take place in Keystone, Colorado, July 28–August 2, 2019. The list of presentations (co-)authored by STR:

“Modeling Solutions for Silicon Carbide Crystal Growth and Epitaxy” Alex Galyukov (Invited talk)

“Computer Modeling of HMCZ Si Growth”, Vladimir Kalaev 

“Computer Modeling of Bulk Crystal Growth From Na-Ga Solution”, A. Vorobiev, A. Kondratyev, A. Smirnov, V. Kalaev

“Effect of Numerical Parameters on Unsteady Melt Flow Features and Impurity Transport within a Simplified CzSi Crystal Growth Process Geometry with Effect of Transverse Magnetic Fields”, S. Demina, A. Smirnov, V. Kalaev, G. Ratnieks, L. Kadinski, A. Sattler. Jointly with Siltronic AG, GERMANY

“Modeling of Dislocation Dynamics in VGF GaAs Crystal Growth”, V. Artemyev, A. Smirnov, V. Kalaev, A. Golubev, L. Beno. Jointly with 2CMK, s. r. o., SLOVAK REPUBLIC

“Unsteady Numerical Simulation Considering Effect of Thermal Stress and Heavy Doping on Behavior of Intrinsic Point Defects in Large Diameter Si Crystal Growing by Czochralski Method”, Y. Mukaiyama, M. Iizuka, V.M. Mamedov, S. Maeda, K. Sueoka. Jointly with GlobalWafers Japan Co., Ltd., JAPAN, and Okayama Prefectural University, JAPAN

“Numerical Stress Modeling of β-Ga2O3 Crystal Growth by Czochralski Method”, M. Iizuka, Y. Mukaiyama, V. Artemyev, V. Mamedov, A. Smirnov, V. Kalaev

“Advances in Turbulence Modeling of Heat and Mass Transport During Cz Silicon Crystal Growth”, V. Artemyev, V. Kalaev, A. Smirnov, D. Borisov, A. Kuliev, P. Dold, R. Kunert, R. Turan, O. Aydin, I. Kabacelik. Jointly with Fraunhofer CSP, GERMANY and iTechSolar, TURKEY