On July 7-12, 2019, STR will participate in The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) in Bellevue, Washington, Seattle’s Eastside. Visit us at our Booth during the Exhibition.
Oral presentation: A2.9.06 “Control of Stress, Bow, and Dislocation Density in (0001) AlN/GaN Superlattices Grown on Silicon” . See more on the subject at STREEM AlGaN page
Oral presentation: D2.2.06 “Radiative and Non-Radiative Processes in InGaN-Based LEDs”. See more about heterostructure modeling with SiLENSe software