On 2nd – 6th September 2018 STR will participate in The European Conference on Silicon Carbide and Related Materials (ECSCRM) that will be held in Birmingham, UK.
Oral presentation “Prediction and Effect of the Substrate Bowing in CVD of SiC” by M. Ramm, M. Bogdanov, A. Kulik, M. Rudinsky will be given at Monday session MO.02, 4H-SiC epitaxy new trends.