STR will attend ICSCRM 2017 in Washington, D.C. on September 17-22, 2017. We will be attending as exhibitors and present two posters:
1) Transport Phenomena in PVT Growth of SiC Bulk Crystals by Matthias Arzig4, Maxim Bogdanov1, Alexey Denisov2 , Alexey Kulik1 , Bari Mamin3, Mark Ramm1 , Roman Sidorov3 , Denis Skvortsov3 , Burkhard Spill2 and Peter Wellmann4;
1 STR Group, Inc. and Soft-Impact, Ltd., Russian Federation;
2 PVA Crystal Growing Systems GmbH, Germany;
3 Mordovia State University, Russian Federation;
4 Friedrich Alexander Universität Erlange, Nürnberg, Germany.
2) Model of Growth of N- and Al-Doped SiC Structures in the SiH4 + C3H8 + HCl System by Mark Ramm1,2, Maxim Bogdanov1,2, Alexander Segal1,2, Masaya Iizuka3 , Yuji Mukaiyama3 , Hiroaki Fujibayashi4 and Kazukuni Hara4;
1 STR Group, Inc., Russian Federation;
2 Soft-Impact, Ltd., Russian Federation;
3 STR Japan K.K., Japan;
4 Denso Corporation, Japan.