Computation and analysis of thermal fields, mass transfer during the whole growth cycle, crystal shape evolution, powder charge degradation, stress and dislocation dynamics during both the growth and cooling
STR will participate in The Joint ISTDM-ICSI conference that will cover topical issues in the area of group IV materials and technology research, and will be held in Como, Italy, on May 21-25, 2023. We will present our recent results in the report “Modeling of Silicon Epitaxy on 300 mm Wafers and Analysis of Thickness Uniformity at Different Scales”
1. CGSim 23.1 has been released. Model of GaN growth from solution now supports solution of Ga-Na-Li. The chemical model of Ga2O3 growth has been made applicable to arbitrary compositions of the Ar-O2-CO2 gas mixture.
2. “Application of computer modeling to pulling rate and productivity of Czochralski pullers in PV Si crystal growth” (Li, Smirnov, JCG, Volume 611, 2023, 127178) is temporarily available for free download.
STR will have a booth at CS International Conference on April 18-19. The conference will be held in Brussels, Belgium, in The Sheraton Brussels Airport Hotel, conveniently located just 39 steps away from the arrivals and departures hall. Do not miss the opportunity to meet in person, stop by at the booth or schedule a meeting.
SiLENSe version 6.5 has been released. New version supports simulation of heterostructures including tunnel junctions. Tunnel junctions can be used to connect different cascades of LED/LD structures or enable replacing p-contact by combination of TJ and n-contact.
VR software for simulation of PVT SiC can now be used to estimate the expected wafer warpage for different positions of the slice in SiC boule. The model is based on the plastic strain inherited by the wafer from the crystal, which results in the wafer deformation after cutting.
PolySim and PolySim 3D version 2022.10 have been released. The main new features are:
– Better integration between PolySim and PolySim3D.
– Popcorn simulation is introduced in PolySim3D. The user can find and analyze the popcorn locations on the rod surfaces and make optimizations to reduce popcorn in the most problematic spots.
STR is participating in 8th International Workshop on Crystal Growth Technology (IWCGT-8) held in Berlin, Germany on May 29 – June 2, 2022. Vladimir Artemyev, STR Belgrade (Serbia), presents a poster on “Advanced Modeling of Melt Turbulence, Impurities and Bubble Transport in Cz Silicon Crystal Growth”.
Features include added chemical model of the phosphorus evaporation from Si melt,
improved chemical model of nitrogen evaporation from Si melt, 3-D modeling of the gas bubbles formation and transport in Cz Si, new STR-k turbulence model for RANS modeling.
SiLENSe version 6.4 has been released. Simulation of PL is updated in such a way that generated carriers are included into the main drift-diffusion computations. As users can specify the p-n junction bias together with PL excitation, PL simulation can predict the photocurrent and can be used for simulation of photodiodes and single-junction solar cells.
On December 6-8, 2021, STR has participated in SSL China and IFWS forum in Shenzhen, China. STR-China presented a talk “Scaling and optimization of chip design of mini- and micro-LEDs”
New open access paper by STR: “Critical aspects of AlGaInP-based LED design and operation revealed by full electrical-thermal-optical simulations” by O. Fedorova, K. Bulashevich, and S. Karpov. All results are obtained with SimuLED.
STR has participated in ACCGE-22/OMVPE-20 on August 2-4, 2021. We presented works on Ga2O3 crystal growth, growth of CZ Silicon, PVT growth of SiC.
VR-PVT SiC has been updated. New features include automatic switching between phases in the powder source (pure carbon, graphitized SiC with simultaneous coexistence of SiC and carbon, or pure SiC), programmable variation of argon/nitrogen ratio in the gas, improved boundary shifting procedure in long-term growth.
On May 19-21, 2021, STR is participating in International Conference on “Sustainable Materials and Technologies for Bio and Energy Applications (SMTBEA-2021)”. Join the conference online and attend Andrey Smirnov’s talk “Numerical modeling in growth of oxide crystals from the melt” on Friday, May 21st at 3:30 p.m. Indian Standard Time.
Unintentional carbon incorporation during MOCVD growth of GaN can now be considered in the whole family of STR software tools for modeling of epitaxy. The model can be applied to different reactor types and wide rang of process parameters, such as temperature, pressure, TMGa flow rate (growth rate), V/III ratio, and carrier gas composition. Modeling can be used both to find process parameters suitable to achieve a required doping level and to adjust the carbon concentration uniformity over large wafers.
CGSim 21.0 has been released. New tool added in Flow Module 3D makes problem setup at least 4 times faster by facilitating the transfer of the hot zone geometry along with computational mesh and material properties from Basic CGSim to Flow Module.
After a long period of COVID-19 quarantines and lockdowns, STR was thrilled to participate in Power and Compound Semiconductor International Forum organized with SEMICON China 2021 on March 18-19. Hope to see more friends and customers at the conferences to come!
SiLENSe Version 6.3 has been released. It is a major update of the software including advanced models for material properties and a new solver with improved speed and convergence.
Chemical model for simulation of THVPE has been added in HEpiGaNs software. Simulation of two-chamber source of GaCl3 is supported.
SimuLED software had a major update, namely, new SpeCLED & RATRO modules with capabilities enabling simulation of micro-LEDs were released. Improvements include new solver in RATRO.
A new version includes new features for modeling of both epitaxy and bulk crystal growth.