STR Group

 

STR provides software and consulting services for modeling of bulk crystal growth, epitaxy and semiconductor devices

 

Surface Recombination in Micro-LEDs

Coupled simulation of current spreading/crowding, LED self-heating, and carrier losses due to surface recombination in SimuLED software

Growth from Melt and Solution

CGSim software for analysis and optimization of Cz, LEC, VGF, Bridgman and other techniques for the growth of semiconductor and semitransparent crystals

Epitaxial stress in AlGaN

Analysis of of bow, stress, and dislocation density evolution during the epitaxy of AlGaN-based structures with STREEM-AlGaN software

SiC growth by PVT

Computation and analysis of thermal fields, mass transfer during the whole growth cycle, crystal shape evolution, powder charge degradation, stress and dislocation dynamics during both the growth and cooling

Upcoming Conferences

Upcoming Conferences

From May to November 2024, STR will participate in the following conferences:
May 12-17, ICMOVPE XXI, Las Vegas, NV, USA
May 20-23, CS ManTech, Tucson, Arizona, USA
May 26-31, IWGO, Berlin, Germany
June 24-26, CGCT-9, Seoul, Republic of Korea
August 4-7, ALD 2024 + ALE 2024, Helsinki, Finland
September 1-5, 34th ICDCM, Dresden, Germany
September 29 – October 4, ICSCRM-2024, Raleigh, NC, USA
October 6-11, PRiME 2024, Honolulu, HI, USA
November 3-8, 12th IWN, Honolulu, HI, USA

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Conference on Si and SiGe

Conference on Si and SiGe

STR will participate in The Joint ISTDM-ICSI conference that will cover topical issues in the area of group IV materials and technology research, and will be held in Como, Italy, on May 21-25, 2023. We will present our recent results in the report “Modeling of Silicon Epitaxy on 300 mm Wafers and Analysis of Thickness Uniformity at Different Scales”

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CGSim Update

CGSim Update

1. CGSim 23.1 has been released. Model of GaN growth from solution now supports solution of Ga-Na-Li.  The chemical model of Ga2O3 growth has been made applicable to arbitrary compositions of the Ar-O2-CO2 gas mixture.
2. “Application of computer modeling to pulling rate and productivity of Czochralski pullers in PV Si crystal growth”  (Li, Smirnov, JCG, Volume 611, 2023, 127178) is temporarily available for free download. 

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CS International

CS International

STR will have a booth at CS International Conference on April 18-19. The conference will be held in Brussels, Belgium, in The Sheraton Brussels Airport Hotel, conveniently located just 39 steps away from the arrivals and departures hall. Do not miss the opportunity to meet in person, stop by at the booth or schedule a meeting.  

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Tunnel Junctions in SiLENSe 6.5

Tunnel Junctions in SiLENSe 6.5

SiLENSe version 6.5 has been released. New version supports simulation of heterostructures including tunnel junctions. Tunnel junctions can be used to connect different cascades of LED/LD structures or enable replacing p-contact by combination of TJ and n-contact.

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New option for PVT SiC

New option for PVT SiC

VR software for simulation of PVT SiC can now be used to estimate the expected wafer warpage for different positions of the slice in SiC boule. The model is based on the plastic strain inherited by the wafer from the crystal, which results in the wafer deformation after cutting.

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PolySim and PolySim 3D version 2022.10 have been released

PolySim and PolySim 3D version 2022.10 have been released

PolySim and PolySim 3D version 2022.10 have been released. The main new features are:
– Better integration between PolySim and PolySim3D.
– Popcorn simulation is introduced in PolySim3D. The user can find and analyze the popcorn locations on the rod surfaces and make optimizations to reduce popcorn in the most problematic spots.

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IWCGT-8

IWCGT-8

STR is participating in 8th International Workshop on Crystal Growth Technology (IWCGT-8) held in Berlin, Germany  on  May 29 – June 2, 2022. Vladimir Artemyev, STR Belgrade (Serbia), presents a poster on “Advanced Modeling of Melt Turbulence, Impurities and Bubble Transport in Cz Silicon Crystal Growth”.

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CGSim 22.0 has been released

CGSim 22.0 has been released

Features include added chemical model of the phosphorus evaporation from Si melt,
improved chemical model of nitrogen evaporation from Si melt, 3-D modeling of the gas bubbles formation and transport in Cz Si, new STR-k turbulence model for RANS modeling.

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PL in SiLENSe 6.4

PL in SiLENSe 6.4

SiLENSe version 6.4 has been released. Simulation of PL is updated in such a way that generated carriers are included into the main drift-diffusion computations. As users can specify the p-n junction bias together with PL excitation, PL simulation can predict the photocurrent and can be used for simulation of photodiodes and single-junction solar cells.

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SSLCHINA and IFWS

SSLCHINA and IFWS

On December 6-8, 2021, STR has participated in SSL China and IFWS forum in Shenzhen, China. STR-China presented a talk “Scaling and optimization of chip design of mini- and micro-LEDs”  

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ACCGE-22 and OMVPE-20

ACCGE-22 and OMVPE-20

STR has participated in ACCGE-22/OMVPE-20 on August 2-4, 2021. We presented works on Ga2O3 crystal growth, growth of CZ Silicon, PVT growth of SiC.

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VR 8.2 for PVT SiC

VR 8.2 for PVT SiC

VR-PVT SiC has been updated. New features include automatic switching between phases in the powder source (pure carbon, graphitized SiC with simultaneous coexistence of SiC and carbon, or pure SiC), programmable variation of argon/nitrogen ratio in the gas, improved boundary shifting procedure in long-term growth.

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Conference SMTBEA-2021

Conference SMTBEA-2021

On May 19-21, 2021, STR is participating in International Conference on “Sustainable Materials and Technologies for Bio and Energy Applications (SMTBEA-2021)”. Join the conference online and attend Andrey Smirnov’s talk “Numerical modeling in growth of oxide crystals from the melt” on Friday, May 21st at 3:30 p.m. Indian Standard Time.

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Intrinsic Carbon Doping

Intrinsic Carbon Doping

Unintentional carbon incorporation during MOCVD growth of GaN can now be considered in the whole family of STR software tools for modeling of epitaxy. The model can be applied to different reactor types and wide rang of process parameters, such as temperature, pressure, TMGa flow rate (growth rate), V/III ratio, and carrier gas composition. Modeling can be used both to find process parameters suitable to achieve a required doping level and to adjust the carbon concentration uniformity over large wafers.

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Faster Problem Specification in Flow Module 3D

Faster Problem Specification in Flow Module 3D

CGSim 21.0 has been released. New tool added in Flow Module 3D makes problem setup at least 4 times faster by facilitating the transfer of the hot zone geometry along with computational mesh and material properties from Basic CGSim to Flow Module. 

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Semicon China 2021

Semicon China 2021

After a long period of COVID-19 quarantines and lockdowns, STR was thrilled to participate in Power and Compound Semiconductor International Forum organized with SEMICON China 2021 on March 18-19. Hope to see more friends and customers at the conferences to come!

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New Version of SiLENSe

New Version of SiLENSe

SiLENSe Version 6.3 has been released. It is a major update of the software including advanced models for material properties and a new solver with improved speed and convergence.

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Tri-Halide VPE of GaN

Tri-Halide VPE of GaN

Chemical model for simulation of THVPE has been added in HEpiGaNs software. Simulation of two-chamber source of GaCl3 is supported.

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SpeCLED & RATRO Update for Micro-LEDs

SpeCLED & RATRO Update for Micro-LEDs

SimuLED software had a major update, namely, new SpeCLED & RATRO modules with capabilities enabling simulation of micro-LEDs were released. Improvements include new solver in RATRO.

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