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Assessment of various LED structure designs for high-current operation
K.A. Bulashevich, M.S. Ramm, S.Yu. Karpov
phys. stat. solidi (c) 6, No. S2, S804-S806 (2009) (01)
Using modelling, we have examined alternative designs of light-emitting diode (LED) structures, aimed at lowering the non-equilibrium carrier concentration and, hence, at suppression of Auger recombination in the active regions of the diodes. Both a multi-quantum-well (MQW) heterostructure and that with a thick single active layer are compared. The MQW structure is found to be ineffective for improvement of the LED internal quantum efficiency (IQE). In contrast, LEDs with a thick single active layers turn out to be quite promising for high-current operation. Detailed simulation provides a guideline for further optimization of the LED heterostructures.
 
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