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Hybrid CdZnO/GaN quantum-well light emitting diodes
J.W. Mares, M. Falanga, A.V. Thompson, A. Osinsky, J.Q. Xie, B. Hertog, A. Dabiran, P.P. Chow, S. Karpov, and W.V. Schoenfeld
J. Appl. Phys. 104, 093107 (2008) (05)
We report on the demonstration of light emission from hybrid CdZnO quantum-well light emitting diodes. A one-dimensional drift-diffusion method was used to model the expected band structure and carrier injection in the device, demonstrating the potential for 90% internal quantum efficiency when a CdZnO quantum well is used. Fabricated devices produced visible electroluminescence that was found to redshift from 3.32 to 3.15 eV as the forward current was increased from 20 to 40 mA. A further increase in the forward current to 50 mA resulted in a saturation of the redshift.
 
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