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Nitride MOCVD
III-V Edition
HVPE Edition

Products > CVDSim (epi)

CVDSim: Modeling of Epitaxy

CVDSim 3D software is released for modeling of III-Nitride MOVPE in TurboDisc K465i reactor by Veeco. The main purpose of the tool is the optimization of the thickness/composition uniformity via the adjustment of the process parameters. Additional information is available upon request

STR has been developing its epi simulation technology for more than 20 years and has accumulated a unique knowledge. The experience obtained within numerous consulting projects resulted in a release of a specialized software package CVDSim intended for modeling of epitaxy in mass-production and research scale reactors. Robust and physically based process models have been constructed and are continuously improved and updated in order to meet today's customer demand and requirements.

With the tens of licenses sold throughout the world (China, Europe, Japan, South Korea, Taiwan, USA), CVDSim is being used now by the leading producers of epitaxial equipment, wafer/epiwafer suppliers and optoelectronic/electronic device manufacturers in everyday work on development of new generation technologies.

Scientific leadership and expertise of STR in modeling of epitaxy is evidenced by the numerous invited talks and seminars at the international conferences and discussion forums on epitaxial technologies (EW-MOVPE XI) and modeling/simulation techniques (IWMCG-5).

There are 5 different Editions of the CVDSim tool:

  • Nitride Edtion for modeling of Metal-Organic Vapor Phase Epitaxy of GaN-, InN- and AlN-based materials, see III-nitride MOCVD;
  • III-V Edition for modeling of Metal-Organic Vapor Phase Epitaxy of arsenides and phosphides, see III/V MOCVD;
  • HVPE Edition for modeling of GaN growth by Hydride Vapor Phase Epitaxy, see also III-nitride ChVPE;
  • SiC Edition for modeling of silicon carbide epitaxy;
  • Si Edition for modeling of silicon epitaxy, see CVD of Si-based;

We offer two versions of CVDSim tool:

  • version for simulation teams at customer companies/universities(add-ons for CFD-ACE+ and Fluent codes);
  • stand-alone version for epi-engineers with limited/no modeling experience (Nitride and III-V Editions).

Selected publications

Nitride Edition:

  1. M. Dauelsberg, C. Martin, H. Protzmann, A. R. Boyd, E. J. Thrush, J. Kappeler, M. Heuken, R.A. Talalaev, E.V. Yakovlev, A. V. Kondratyev,
    ?Modeling and process design of III-Nitride MOVPE at near-atmospheric pressure in Close Coupled Showerhead and Planetary Reactors? Journal of Crystal Growth 298, 418 (2007)
  2. E.V. Yakovlev, R.A. Talalaev, R.W. Martin, C. Jeynes, N. Peng, C.J. Deatcher, and I.M. Watson,
    ?Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor?, Phys. Stat. Sol. (c) 3, 1620 (2006)
  3. A.Lobanova, K.Mazaev, R.A.Talalaev, M.Leys, S.Boeykens, K.Cheng, S.Degroote,
    ?Effect of V/III ratio in AlN and AlGaN MOVPE?, Journal of Crystal Growth 287, 601 (2006)
  4. Zavarin E.E., Sizov D.S., Lundin W.V., Tsatsulnikov A.F., Talalaev R.A., Kondratyev A.V., Bord O.V.,
    ?In-situ investigations of GaN chemical instability during MOCVD?, Electrochemical Society Proceedings 2005-09, 299 (2005)

III-V Edition:

  1. R.A. Talalaev, E.V. Yakovlev, S.Yu. Karpov, Yu.N. Makarov,
    ?On low temperature kinetic effects in metal ?organic vapor phase epitaxy of III ?V compounds?, Journal of Crystal Growth 230, 232 (2001)
  2. E.V. Yakovlev, Y.A. Shpolyanskiy, R.A. Talalaev, S.Y. Karpov, Y.N. Makarov, T. Bergunde, and S.A. Lowry,
    ?Detailed Modeling of Metal Organic Vapor Phase Epitaxy of III-V Ternary compounds in Production-Scale AIX 2400G3 Planetary Reactor?, Electrochemical Society Proceedings 2001-13, 292 (2001)

HVPE Edition:

  1. A.S. Segal, A.V. Kondratyev, S.Yu. Karpov, D. Martin, V. Wagner, and M. Ilegems,
    "Surface chemistry and transport effects in GaN hydride vapor phase epitaxy", J. Crystal Growth, 270 (2004) 384
  2. E. Richter Ch. Hennig, M. Weyers, F. Habel, J.-D. Tsay, W.-Y. Liu, P. Brueckner, F. Scholz, Yu. Makarov, A. Segal, J. Kaeppeler,
    "Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE", Journal of Crystal Growth 277 (2005) 6

SiC Edition:

  1. Y. Shishkin, R.L. Myers-Ward, S.E. Saddow, A. Galyukov, A. Vorob?ev, D. Brovin, D. Bazarevskiy, R. Talalaev and Yu. Makarov,
    ?Analysis of SiC CVD Growth in a Horizontal Hot-wall Reactor by Experiment and 3D Modelling?, Mat. Sci. Forum 556-557, 61 (2007)
  2. A.N. Vorob?ev, A.K. Semennikov, A.I. Zhmakin, Yu.N. Makarov, M. Dauelsberg, F. Wischmeyer, M. Heuken, H. Jurgensen,
    "Modeling analysis of gas-phase nucleation during SiC CVD in the Planetary Reactor", Mat. Sci. Forum, 353-356 (2001) 103

Si Edition:

  1. A.S. Segal, A.O. Galyukov, A.V. Kondrat?yev, A.P. Sid?ko, S.Yu. Karpov, Yu.N. Makarov, W. Siebert, P. Storck, S.A. Lowry,
    "Global model of silicon chemical vapor deposition in Centura reactors", Electrochem. Soc. Proc. 2000-13 (2000) 456
  2. A. S. Segal, A. O. Galyukov, A. V. Kondratyev, A. P. Sid'ko, S. Yu. Karpov, Yu. N. Makarov, W. Siebert and P.Storck,
    "Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors", Microelectronic Engineering 56 (2001) 93



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