HEpiGaNS (Hydride Epitaxial GaN Simulator) is designed for modeling of GaN
crystal growth by hydride vapor phase epitaxy (HVPE).
Fig 1. Combined triangular and quadrilateral computational mesh in the growth domain.
Global Heat Transfer Problem in a HVPE Reactor for GaN Crystal Growth
Inductive heating. The computation of the Joule heat
sources due to inductive heating is carried out by solving the Maxwell
Conductive heat transfer in solid materials. The thermal
conductivity of the materials used in the growth system can be prescribed by
the user as a function of temperature. Anisotropic thermal conductivity can
Convective and radiative heat transfer in transparent gas
blocks. The effect of convection on temperature distribution in the whole
reactor is taken into account. The view-factor technique is used to model
the radiation heat exchange
Species mass fraction distributions near the wafer.
Species Transport in the Reactor
Non-isothermal flow of gas mixture
Multi-component diffusion of reactive species, including
GaCl, HCl, NH3, N2, and H2
Heterogeneous Chemical Processes
Chemically reactive surfaces of the GaN crystal
Chemically reactive surfaces of reactor side walls where
GaN deposit is formed
Chemically reactive surfaces of the boat with liquid Ga
A quasi-thermodynamic model is used to describe the mass
exchange between the vapor and solid surface
Crystal evolution during the growth within the
Polycrystalline deposit evolution on the reactor walls
Computation of the thermal stress distribution in the
crystal, including the density of gliding dislocations in the crystal
calculated on the assumption of a full stress relaxation due to plastic
deformation. This option is available for axisymmetric vertical reactors,
providing an adequate simulation of the growth of hexagonal crystals on
Analysis of the propagation of threading dislocations in
the growing GaN crystal on a SiC or sapphire substrate
Fig 3. Modeling of
the crystal and deposit shape evolution. t = 10 h.
HEpiGaNS is supplied in the following configurations:
Basic Configuration (Long Term Growth)
Hot-line support is provided on request. The support includes free of charge
supply of updated versions released during the license period and technical
consulting on the HEpiGaNS™ operation.