Specification of the growth system in VR-CVD SiC
Temperature distribution and flow pattern
Si partial pressure distributions in the growth region. Growth from
SiCl4 and C3H8
C2H2 partial pressure distributions in the growth region.
Growth from SiCl4 and C3H8
Comparison with experiment: growth rate vs. C3H8
flow rate. Experiment: S. Nigal et al., JCG 284, 112 (2005).
VR-CVD SiC is designed for modeling of SiC bulk
crystal growth by Chemical Vapor Deposition.
Global Heat Transfer Problem in a System for SiC Crystal
Inductive heating. The computation of the Joule heat
sources due to inductive heating is carried out by solving the Maxwell
Conductive heat transfer in solid materials. The
thermal conductivity of the materials used in the growth system can be
prescribed by the user as a function of temperature. Anisotropic thermal
conductivity can be assigned.
Convective and radiative heat transfer in transparent
gas blocks. The view-factor technique is used to model the radiation heat
in the Reactor
Non-isothermal flow of gas mixture.
Multi-component diffusion of reactive species.
Homogeneous chemistry involving chemical
decomposition of the precursors.
Support of 2 types of precursors: Hydrides
(C3H8 and SiH4) and Chlorides
(C3H8 and SiCl4).
Prospective Development: Support of growth
and SiH2Cl2 precursors.
Heterogeneous Chemical Processes
Chemically reactive surfaces of the seed, growing
crystal and reactor side walls. A quasi-thermodynamic model is used to
describe the mass exchange between the vapor and solid surface.
Crystal and wall deposit evolution during the growth
within the quasi-stationary approximation.
Computation of the thermal stress distribution in the
crystal, including the density of gliding dislocations in the crystal
calculated on the assumption of a full stress relaxation due to plastic
Analysis of the propagation of threading dislocations
from the seed into the growing crystal. It includes 2D propagation of
dislocations originating from the seed in a selected vertical crystal
cross-section and 3D analysis yielding the dislocation outcrop mapping
in a set of horizontal crystal cuts.
VR-CVD SiC is supplied in the following configurations:
Basic Configuration (Long Term Growth)
Basic Configuration with the Threading Dislocations Module
Hot-line support is provided on request. The support includes free of charge supply
of updated versions released during the license period and technical consulting
on the VR-CVD SiC operation.