Example: Blue SQW LED heterostructure
Shown below are some results of simulations of a simple blue SQW LED structure consisting of n-GaN contact layer (Nd = 3×1018 cm-3), an undoped InGaN SQW active region 3.5 nm thick, a p-type 10%-AlGaN electron blocking layer (Na = 7×1019 cm-3), and a p-GaN contact layer (Na = 7×1019 cm-3).
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Fig. 2(a-d). Variation of the band diagram, carrier concentrations, SQW profile, and emission spectra with the bias |