Example: Blue SQW LED heterostructure

Shown below are some results of simulations of a simple blue SQW LED structure consisting of n-GaN contact layer (Nd = 3×10¹⁸ cm^-3), an undoped InGaN SQW active region 3.5 nm thick, a p-type 10%-AlGaN electron blocking layer (Na = 7×10¹⁹ cm^-3), and a p-GaN contact layer (Na = 7×10¹⁹ cm^-3).

Figure 1 Schematic view of the heterostructure

Fig. 2(a-d). Variation of the band diagram, carrier concentrations, SQW profile, and emission spectra with the bias