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Modeling of Crystal Growth and Devices

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"CGSim 14.1 has been released"
2013.09.17
CGSim 14.1 has been released. New version contains a number of updates and added capabilities, including: - Continuous modeling of stress relaxation and dislocation evolution during both crystallization and cooling stages; - Dynamic modeling of Cz and Ky sapphire crystal growth; - Chemical model to account for an additional source of SiO and CO contaminants in argon carrier-gas due to gap between the quartz and graphite parts of the crucible; - A model of facet formation (calculation of facets); - PID algorithm to adjust the power by the growth rate is implemented; - Diffusion of impurities in solid blocks (crystal and crucible). Please, contact us it you would like to know more about the software features and applicability.

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