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Modeling of Crystal Growth and Devices

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CVD of SiGe

Consulting > CVD of Si-based

    We have an advanced tool:
    - to cover formation, growth and transport of gas-phase generated particles;
    - to simulate the growth kinetics using quasi-thermodynamic approach;
    - to compute heat and mass transport under the conditions of laminar and turbulent flow;
    - to consider the growth in reactors of different designs in the 1D, 2D and 3D frameworks;
    - to model in-situ doping and autodoping processes.

The simulations will allow you:
    - to reduce the wafer slip deformation;
    - to predict the film thickness uniformity and the alloy composition;
    - to find the growth rate dependencies on the operating conditions and the reactor design;
    - to avoid or eliminate much loss in precursors due to gas-to-particle conversion.


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