We offer a wide range of consulting services in the area
of semiconductor crystal growth and device simulation. Our
consulting activity covers PVT Growth of SiC and A3B5, CVD
of Si-based materials (Si, SiC, and SiGe), CVD of A3B5 and
their alloys, CZ growth of Si and A3B5, simulation of heterostructure
devices, etc. The consulting is based on advanced conventional
and original models of the underlying physical processes,
coupled with mighty software for their numerical implementation.
Modeling of advanced semiconductor devices - light emitting diodes (LEDs),
laser diodes, heterojunction bipolar transistors (HBT), high-electron
mobility transistors (HEMTs), Schottky diodes, etc.
Modeling of Chemical Vapor Deposition
Modeling of epitaxy, including Metal-Organic Vapor Phase Epitaxy
of GaN-, InN- and AlN-based materials (III-nitride MOCVD),
Metal-Organic Vapor Phase Epitaxy of arsenides and phosphides (III/V MOCVD),
GaN growth by Hydride Vapor Phase Epitaxy (III-nitride HVPE),
silicon carbide epitaxy, silicon epitaxy.
CVD of Si-based
CVD of III-Vs
Modeling of Bulk Crystal Growth
Growth from melt and solutions
We have been working in modeling and optimization of crystal growth from the
melt for over 10 years. During this period of time, we worked with industries
on the optimization of the growth technology and participated in a number of
projects with research laboratories. The experience we have gained covers
modeling and optimization of such growth techniques as Czochralski (CZ),
Liquid Encapsulated Czochralski (LEC), and Bridgman.
We develop and apply for the industrial facilities the advanced models of
SiC, AlN and GaN bulk crystal growth by PVT with the focus on specific
features of the growth technique. Comprehensive analysis is performed in a
wide range of the problems arising in long-term growth, from evaluation of
the growth system design to prediction of the crystal quality.