STR Group

Modeling of Crystal Growth and Devices

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CONSULTING
PVT Growth
CVD of Si-based
CVD of III-Vs
Growth from Melt
Device Modeling

We offer a wide range of consulting services in the area of semiconductor crystal growth and device simulation. Our consulting activity covers PVT Growth of SiC and A3B5, CVD of Si-based materials (Si, SiC, and SiGe), CVD of A3B5 and their alloys, CZ growth of Si and A3B5, simulation of heterostructure devices, etc. The consulting is based on advanced conventional and original models of the underlying physical processes, coupled with mighty software for their numerical implementation.

Device Modeling


Device Modeling. Modeling of advanced semiconductor devices - light emitting diodes (LEDs), laser diodes, heterojunction bipolar transistors (HBT), high-electron mobility transistors (HEMTs), Schottky diodes, etc.


Modeling of Chemical Vapor Deposition


Modeling of epitaxy, including Metal-Organic Vapor Phase Epitaxy of GaN-, InN- and AlN-based materials (III-nitride MOCVD), Metal-Organic Vapor Phase Epitaxy of arsenides and phosphides (III/V MOCVD), GaN growth by Hydride Vapor Phase Epitaxy (III-nitride HVPE), silicon carbide epitaxy, silicon epitaxy.

CVD of Si-based

CVD of III-Vs


Modeling of Bulk Crystal Growth


Growth from melt and solutions. We have been working in modeling and optimization of crystal growth from the melt for over 10 years. During this period of time, we worked with industries on the optimization of the growth technology and participated in a number of projects with research laboratories. The experience we have gained covers modeling and optimization of such growth techniques as Czochralski (CZ), Liquid Encapsulated Czochralski (LEC), and Bridgman.

PVT Growth. We develop and apply for the industrial facilities the advanced models of SiC, AlN and GaN bulk crystal growth by PVT with the focus on specific features of the growth technique. Comprehensive analysis is performed in a wide range of the problems arising in long-term growth, from evaluation of the growth system design to prediction of the crystal quality.


 

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