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Modeling of Crystal Growth and Devices

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CVD OF III-VS
III/V MOCVD

Consulting > CVD of III-Vs
Consulting services in III-V Chemical Vapor Deposition include equipment and process modeling of Metalorganic Vapor Phase Epitaxy (MOVPE) and Molecular Beam Epitaxy (MBE) of conventional III-V semiconductor materials and group III-Nitrides as well as of Hydride Vapor Phase Epitaxy (HVPE) of group III-Nitrides. The consulting is based on advanced models of the underlying physical and chemical phenomena and specific software tools. The simulations cover the whole range of length and time scales involved into deposition process - from reactor flow dynamics to adatom kinetics on the growing surfaces.

CVDSim - specialized software package intended for modeling of epitaxy in mass-production and research scale reactors.

PolySim software for design and optimization of reactors for polycrystalline silicon deposition from chlorosilanes by Siemens process.

HEpiGaNS software for modeling of GaN crystal growth by hydride vapor phase epitaxy (HVPE).

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