STR provides dedicated software and
consulting services for simulation and optimization of crystal growth
techniques and for modelling of semiconductor based devices.
The scope of STR's expertise includes CVD, sublimation growth, crystal
growth from the melt, and modeling of advanced semiconductor devices, such as
light emitting diodes, laser diodes, heterojunction bipolar
transistors, high-electron mobility transistors, and Schottky diodes.
Research projects conducted by STR make our company capable
of solving a wide range of practical problems in the semiconductor technology.
Advanced research projects
carried out in STR provide our
company with realistic models of crystal
growth and epitaxy accounting, in particular, for surface
kinetics, evolution of strains and defects, surface phase
segregation, and mixing effects in solid solutions, necessary to solve
up to date practical problems of semiconductor technologies. We
publish research papers, participate in conferences and exhibitions, see Events
section for more information.
STR offers software products
for simulation and optimization of crystal growth techniques and
heterostructure device engineering.
Since experimental optimization of the growth process normally takes much
effort and is resource- and time-consuming, modeling
can be very beneficial when the simulation tool can predict important
features of the process. Our software employs advanced physical models and
numerical algorythms. It provides growers with information
about numerous physical processes responsible for the growth of crystal
and its quality. Most of our software products have a built-in
database of material properties. Friendly user interface is
oriented on researchers and engineers and is aimed at minimization of the
user efforts needed for the problem specification.
Run-time and post-processing visualization is available within the GUI and, in
addition, the computational results are stored in files allowing
a post-processing analysis using commercial graphical packages.
Our consulting services
are directly based on the scientific research. They employ both
conventional and original models of crystal growth coupled with a powerful
software for detailed 3D modeling of flow dynamics, heat and species
transport in equipment of arbitrary geometry. Our consulting
abilities cover PVT and CVD growth of a number of Si-based
materials, CZ growth of Si and
, device simulation, etc.
STR currently provides software and consulting services to over 170
companies and Academic Institutions in USA, Europe, and Asia.