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Modeling of Crystal Growth and Devices

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CGSim (melt)
CVDSim (epi)
PolySim (Siemens)
Virtual Reactor
PVT Growth
CVD of Si-based
Growth from Melt
Device Modeling

2016.07.04   SiLENSe 5.11 has been released
New options are listed below:
  • Calculation of the integral characteristics (like IQE, leakage current density and so on) has been slightly revised, 2D carrier concentration in the active region is added to the table. This version of SiLENSe enables export of additional data into SpeCLED for analysis of the lateral carrier diffusion and surface recombination at the chip sidewalls (the respective version of SpeCLED is coming soon).
  • A number of minor improvement has been done, please read Release Notes.
2016.06.22    STR Group has released the Crystal Growth Simulator CGSim 16.1.
STR Group has released the Crystal Growth Simulator CGSim 16.1. Large number of new options is implemented.
Steady and unsteady modeling of self-defect formation, evolution and clusterization, including formation of precipitates is available within steady and unsteady computations, including computations with variable crystal pulling rate. Computations of view factors in unsteady simulation is accelerated. Advanced model of impurity transport during Si growth is extended to account for kinetic limitations at melt free surface. Automatic creation of multiple crystal positions for Cz growth processes makes serial computations much faster. Loading of the dcr-files is significantly accelerated. Overall stability of the solver and solver GUI is improved.
2016.06.01   Virtual Reactor version 7.5 has been released

The key modifications include addition of the model of growth of bulk β-Ga2O3 crystals by HVPE, addition of the parasitic deposition model in ZnS and ZnSe growth by CVD, and modification of the model of automatic creation of bulk polycrystalline deposits in VR-PVT SiC, VR-PVT AlN, VR-CVD SiC and HEpiGaNS.
2016.01.15   SiLENSe 5.10 has been released
New options are listed below:
  • Laser computations has been improved considerably by adding the stimulated recombination rate into the drift-diffusion model. It allows prediction of the laser operation above the threshold, while previous versions only extrapolated the output power from the differential efficiency calculated at threshold conditions.
  • Convergence of PL computations has been improved.
2015.11.13   STREEM-AlGaN Edition version 1.2 has been released
The major modification includes the improvement in the modeling of dislocation nucleation.
STREEM-AlGaN is a specialized software tool for self-consistent modeling of the evolution of stress and bow, as well as dislocation dynamics during the growth and cooling of (0001) III-Nitride heterostructures by MOCVD on silicon and sapphire wafers
2015.11.05   STREEM-InGaN Edition version 2.0 has been released
The principal changes in version 2.0 are:
- AlInGaN layers can now be considered in the active region
- annihilation of threading dislocations is considered
STREEM-InGaN is a specialized software tool for modeling the characteristics of (0001) III-Nitride device heterostructures grown by MOCVD with the account of indium surface segregation and stress relaxation. The software is aimed at understanding and control of the structure properties by adjusting the process recipe.
2015.09.30    STR Group has released the Crystal Growth Simulator CGSim 15.3.
STR Group has released the Crystal Growth Simulator CGSim 15.3. A number of new options is offered. In particular, features available for modeling of dislocations are extended; advanced chemical model of SiC growth from solution is revised and extended. Minor improvements of stability of the solver and the solver GUI are implemented. Configuration of solver GUI and Defects Module GUI is slightly revised.
2015.09.01   Virtual Reactor version 7.4 has been released

The key modifications include the two-waveband semi-transparency model, improvement of the boundary shifting algorithm in VR-PVT SiC, and improvement of the convergence stability in VR-NE, VR-III-V and VR-CVD SiC editions.
2015.04.29   STR Group has released the Crystal Growth Simulator CGSim 15.2.
STR Group has released the Crystal Growth Simulator CGSim 15.2. A variety of new options is offered; in particular, chemical models for growth of SiC and GaN from solution have been recently implemented. New settings of the solver interface and graphical user interface provide users more flexibility. Solver stability is improved and a few minor bugs are fixed.
2015.01.19   SiLENSe 5.8 has been released

SiLENSe Version 5.8 & Version 5.8 Laser Edition have been released. New options are listed below:
  • Import of the simulation results for the layer composition and relaxation obtained by STR STREEM InGaN software.
  • Spatial variation of layer composition can now be specified as a custom function of the position.
  • Generation of the computational grid is considerably changed and more options for control of the grid is available for users.
  • Pause/continue button is added to the solver control window.
  • A number of minor errors has been fixed, while non of them provide wrong simulation results.
2014.09.29   STR Group announces a new release CGSim 15.1
CGSim 15.1 provides users a unique opportunity to calculate unsteady crystal growth processes, from furnace heating up to cooling down, within a single computation. Such computations can be performed for multiple processes and materials. These computations are supported by new functions, which include specification of time dependent gas flow rate, pressure, material properties, and possibility to change heater control algorithm (direct to inverse and back) within a single computation. more...
2013.09.17   CGSim 14.1 has been released
CGSim 14.1 has been released. New version contains a number of updates and added capabilities, including continuous modeling of stress relaxation and dislocation evolution during both crystallization and cooling stages. more...
2013.01.30   SiLENSe 5.4 has been released
SiLENSe Version 5.4 & Version 5.4 Laser Edition have been released. Redesigned interface for working with material properties enables specification of the flexible user-defined functional or tabulated dependencies on the temperature, alloy composition, and wavelength. Another new option is simulation of PL experiment with resonant excitation. more...
2012.07.05   CGSim 12.1 has been released
STR Group has launched a new release of crystal growth simulation software: CGSim 12.1. Designed for crystal growth optimization, CGSim software has extended its modeling capabilities for more accurate and fast optimization of crystal growth processes. The major improvements have been implemented in modeling of electromagnetic effects, species transport coupled with time and temperature dependent species deposition, thermal stresses and dislocations. more...


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